型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP50N06J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Met |
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FQP50N06L | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,逻辑电平,QFET®,60 V,52.4 A,21 mΩ,T |
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FQP50N06L | FAIRCHILD |
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60V LOGIC N-Channel MOSFET |
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FQP50N06LJ69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, M |
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FQP55N06 | FAIRCHILD |
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60V N-Channel MOSFET |
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FQP55N06J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 55A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta |
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FQP55N10 | FAIRCHILD |
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100V N-Channel MOSFET |
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FQP55N10 | THINKISEMI |
获取价格 |
55A,100V Heatsink Planar N-Channel Power MOSFET |
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FQP55N10 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,100 V,55 A,26 mΩ,TO-220 |
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FQP55N10J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Me |
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