Datasheet > FQP50N06

FQP50N06

更新时间： 2024-09-08 10:23:35

品牌	Logo	应用领域
TGS		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
1页	121K
描述
60V N-Channel MOSFET

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FQP50N06 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

FQP50N06

60V N-Channel MOSFET

DESCRIPTION

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s

’

proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well suited for low voltage applications such as

automotive, DC/DC converters, and high efficiency switching for power

management in portable and battery operated products.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)

Parameter

Drain-Source Voltage

Drain Current - Continuous

Drain Current - Pulsed

Gate-Source Voltage

Value Unit

V_DSS

I_D

I_DM

V_GSS

P_D

200

Power Dissipation

120

150

^oC

T_j

Max. Operating Junction Temperature

Storage Temperature

TO-220

T_stg

-55~150 ^oC

ELECTRICAL CHARACTERISTICS

( Ta = 25 C)

Parameter

Symbol

Test Conditions

Min.

Typ. Max. Unit

BV_DSS

I_DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

V_GS= 0V, I =250 A

—

V_DS=60V, V_GS=0V

V_GS=25V, V_DS=0V

V_GS= -25V, V_DS=0V

1.0

—

I_GSSF

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

100

-100

4.0

—

I_GSSR

V_GS(th)

R_DS(on)

Gate Threshold Voltage

V_DS= V_GS, I =250 A

2.0

Static Drain-Source On-Resistance

Forward Transconductance

V_GS= 10 V, I_D= 25 A

V_DS= 25 V, I_D= 25 A

V_GS= 0 V, I_S= 50 A

—

g_FS

—

V_SD

Drain-Source Diode Forward Voltage

1.5

—

中文翻译

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