生命周期: | Obsolete | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 200 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 45 A |
最大漏源导通电阻: | 0.025 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 180 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP45N15V2 | FAIRCHILD |
获取价格 |
150V N-Channel MOSFET | |
FQP45N15V2 | ONSEMI |
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功率 MOSFET,N 沟道,QFET®,150 V,45 A,40 mΩ,TO-220 | |
FQP46N15 | FAIRCHILD |
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150V N-Channel MOSFET | |
FQP46N15 | ONSEMI |
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N 沟道,QFET® MOSFET,150V,45.6A,42mΩ | |
FQP46N15-Q | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FQP47P06 | FAIRCHILD |
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60V P-Channel MOSFET | |
FQP47P06 | ONSEMI |
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功率 MOSFET,P 沟道,QFET®,-60 V,-47 A,26 mΩ,TO-220 | |
FQP47P06 | UMW |
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种类:P-Channel;漏源电压(Vdss):-60V;持续漏极电流(Id)(在25°C | |
FQP4N20 | FAIRCHILD |
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200V N-Channel MOSFET | |
FQP4N20J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Met |