是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 1 week | 风险等级: | 0.94 |
雪崩能效等级(Eas): | 1124 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 150 V | 最大漏极电流 (Abs) (ID): | 45 A |
最大漏极电流 (ID): | 45 A | 最大漏源导通电阻: | 0.04 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 220 W |
最大脉冲漏极电流 (IDM): | 180 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP46N15 | FAIRCHILD |
获取价格 |
150V N-Channel MOSFET |
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FQP46N15 | ONSEMI |
获取价格 |
N 沟道,QFET® MOSFET,150V,45.6A,42mΩ |
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FQP46N15-Q | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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FQP47P06 | FAIRCHILD |
获取价格 |
60V P-Channel MOSFET |
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FQP47P06 | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-60 V,-47 A,26 mΩ,TO-220 |
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FQP47P06 | UMW |
获取价格 |
种类:P-Channel;漏源电压(Vdss):-60V;持续漏极电流(Id)(在25°C |
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FQP4N20 | FAIRCHILD |
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200V N-Channel MOSFET |
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FQP4N20J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Met |
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FQP4N20L | FAIRCHILD |
获取价格 |
200V LOGIC N-Channel MOSFET |
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FQP4N20L | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,逻辑电平,QFET®,200 V,3.8 A,1.35 Ω, |
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