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FQP44N10 PDF预览

FQP44N10

更新时间： 2024-11-17 11:14:23
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 772K
描述
N 沟道 QFET® MOSFET 100V，43.5A，39mΩ

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中文翻译

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FQP44N10 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：1.55
Is Samacsys：N其他特性：FAST SWITCHING
雪崩能效等级（Eas）：530 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：43.5 A
最大漏极电流 (ID)：43.5 A最大漏源导通电阻：0.039 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：146 W
最大脉冲漏极电流 (IDM)：174 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FQP44N10 数据手册

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 		150V N-Channel MOSFET
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 		功率 MOSFET，N 沟道，QFET®，150 V，45 A，40 mΩ，TO-220
FQP46N15 FAIRCHILD

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 		150V N-Channel MOSFET
FQP46N15 ONSEMI

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 		N 沟道，QFET® MOSFET，150V，45.6A，42mΩ
FQP46N15-Q FAIRCHILD

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 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FQP47P06 FAIRCHILD

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 		60V P-Channel MOSFET
FQP47P06 ONSEMI

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 		功率 MOSFET，P 沟道，QFET®，-60 V，-47 A，26 mΩ，TO-220

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