FQB3N60CTM

更新时间： 2024-11-24 03:37:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	870K
描述
600V N-Channel MOSFET

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数据手册

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FQB3N60CTM 数据手册

May 2006

QFET

FQB3N60C

600V N-Channel MOSFET

Features

Description

•

3A, 600V, R_DS(on)= 3.4Ω @ V_GS= 10 V

Low gate charge ( typical 10.5 nC)

Low C_rss( typical 5 pF)

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficiency switched mode power supplies, active power factor

correction, electronic lamp ballasts based on half bridge

topology.

Fast switching

100% avalanche tested

Improved dv/dt capability

D²-PAK

FQB Series

Absolute Maximum Ratings

Symbol

Parameter

FQB3N60C

Unit

V_DSS

Drain-Source Voltage

Drain Current

600

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

1.8

(Note 1)

(Note 2)

I_DM

Drain Current

- Pulsed

±30

150

V_GSS

E_AS

I_AR

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

7.5

4.5

V/ns

Power Dissipation

(T_C= 25°C)

- Derate above 25°C

0.62

W/°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

°C

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

1.67

Unit

°C/W

R_θJC

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient

R_θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

FQB3N60C REV. A1

www.fairchildsemi.com

12 3 4 5 6 7 8

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