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FQB47P06TM PDF预览

FQB47P06TM

更新时间: 2024-11-02 19:43:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
9页 717K
描述
Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

FQB47P06TM 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-263包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.3
雪崩能效等级(Eas):820 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):47 A最大漏极电流 (ID):47 A
最大漏源导通电阻:0.026 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):160 W最大脉冲漏极电流 (IDM):188 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQB47P06TM 数据手册

 浏览型号FQB47P06TM的Datasheet PDF文件第2页浏览型号FQB47P06TM的Datasheet PDF文件第3页浏览型号FQB47P06TM的Datasheet PDF文件第4页浏览型号FQB47P06TM的Datasheet PDF文件第5页浏览型号FQB47P06TM的Datasheet PDF文件第6页浏览型号FQB47P06TM的Datasheet PDF文件第7页 
May 2001  
TM  
QFET  
FQB47P06 / FQI47P06  
60V P-Channel MOSFET  
General Description  
Features  
These P-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand a high energy pulse in the  
avalanche and commutation modes. These devices are  
well suited for low voltage applications such as automotive,  
DC/DC converters, and high efficiency switching for power  
management in portable and battery operated products.  
-47A, -60V, R  
= 0.026@V = -10 V  
DS(on) GS  
Low gate charge ( typical 84 nC)  
Low Crss ( typical 320 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
S
!
D
G!  
G
S
D2-PAK  
FQB Series  
I2-PAK  
FQI Series  
G
D
S
!
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB47P06 / FQI47P06  
Units  
V
V
I
Drain-Source Voltage  
-60  
-47  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
-33.2  
-188  
± 25  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
820  
mJ  
A
AS  
-47  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
16  
mJ  
V/ns  
W
AR  
dv/dt  
-7.0  
Power Dissipation (T = 25°C) *  
3.75  
160  
P
A
D
Power Dissipation (T = 25°C)  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.06  
-55 to +175  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
0.94  
40  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2001 Fairchild Semiconductor Corporation  
Rev. A2. May 2001  

FQB47P06TM 替代型号

型号 品牌 替代类型 描述 数据表
FQB47P06TM_AM002 FAIRCHILD

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Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Met
FQB47P06 FAIRCHILD

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60V P-Channel MOSFET

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