是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-263 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.3 |
雪崩能效等级(Eas): | 820 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 47 A | 最大漏极电流 (ID): | 47 A |
最大漏源导通电阻: | 0.026 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 160 W | 最大脉冲漏极电流 (IDM): | 188 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FQB47P06TM_AM002 | FAIRCHILD |
类似代替 |
Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Met | |
FQB47P06 | FAIRCHILD |
类似代替 |
60V P-Channel MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQB47P06TM_AM002 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Met | |
FQB47P06TM-AM002 | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-60 V,-47 A,26 mΩ,D2PAK | |
FQB4N20 | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET | |
FQB4N20L | FAIRCHILD |
获取价格 |
200V LOGIC N-Channel MOSFET | |
FQB4N20LTM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.8A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Met | |
FQB4N20TM | ROCHESTER |
获取价格 |
3.6A, 200V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | |
FQB4N25 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
FQB4N25TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Me | |
FQB4N50 | FAIRCHILD |
获取价格 |
500V N-Channel MOSFET | |
FQB4N50TM | FAIRCHILD |
获取价格 |
暂无描述 |