型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FQB50N06TM | FAIRCHILD |
类似代替 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Met | |
FDD5670 | FAIRCHILD |
类似代替 |
60V N-Channel PowerTrenchTM MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQB50N06TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Met | |
FQB50N06TM | ROCHESTER |
获取价格 |
50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | |
FQB50N06TM | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®, 60 V,50 A,22 mΩ,D2PAK | |
FQB55N06 | FAIRCHILD |
获取价格 |
60V N-Channel MOSFET | |
FQB55N06TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 55A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta | |
FQB55N10 | FAIRCHILD |
获取价格 |
100V N-Channel MOSFET | |
FQB55N10TM | FAIRCHILD |
获取价格 |
100V N-Channel MOSFET | |
FQB55N10TM | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,100 V,55 A,26 mΩ,D2PAK | |
FQB58N08 | FAIRCHILD |
获取价格 |
80V N-Channel MOSFET | |
FQB58N08TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 57.5A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, M |