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FQB50N06LTM PDF预览

FQB50N06LTM

更新时间: 2024-11-02 12:48:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 836K
描述
N-Channel QFET® MOSFET 60 V, 52.4 A, 21 mΩ

FQB50N06LTM 数据手册

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November 2013  
FQB50N06L  
N-Channel QFET® MOSFET  
60 V, 52.4 A, 21 mΩ  
Description  
Features  
52.4 A, 60 V, RDS(on) = 21 m(Max.) @ VGS = 10 V,  
This N-Channel enhancement mode power MOSFET is  
produced using Fairchild Semiconductor’s proprietary planar  
stripe and DMOS technology. This advanced MOSFET  
technology has been especially tailored to reduce on-state  
resistance, and to provide superior switching performance  
and high avalanche energy strength. These devices are  
suitable for switched mode power supplies, active power  
factor correction (PFC), and electronic lamp ballasts.  
ID = 26.2 A  
Low Gate Charge (Typ. 24.5 nC)  
Low Crss (Typ. 90 pF)  
100% Avalanche Tested  
175°C Maximum Junction Temperature Rating  
D
D
G
G
D2-PAK  
S
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted.  
C
Symbol  
Parameter  
FQB50N06LTM  
Unit  
V
V
I
Drain-Source Voltage  
60  
52.4  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
37.1  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
210  
A
DM  
V
E
I
Gate-Source Voltage  
± 20  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
990  
mJ  
A
AS  
52.4  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
12.1  
mJ  
V/ns  
W
AR  
dv/dt  
7.0  
Power Dissipation (T = 25°C) *  
3.75  
P
A
D
Power Dissipation (T = 25°C)  
121  
W
C
- Derate above 25°C  
0.81  
W/°C  
°C  
T , T  
Operating and Storage Temperature Range  
Maximum lead temperature for soldering,  
1/8" from case for 5 seconds  
-55 to +175  
J
STG  
T
300  
°C  
L
Thermal Characteristics  
Symbol  
Parameter  
Unit  
FQB50N06LTM  
RJC  
RJA  
Thermal Resistance, Junction to Case, Max.  
1.24  
62.5  
40  
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.  
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.  
oC/W  
www.fairchildsemi.com  
©2000 Fairchild Semiconductor Corporation  
FQB50N06L Rev. C1  
1

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