FDD5670

更新时间： 2024-11-19 22:40:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	108K
描述
60V N-Channel PowerTrenchTM MOSFET

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中文翻译

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数据手册
替代型号

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FDD5670 数据手册

March 1999

ADVANCE INFORMATION

FDD5670

60V N-Channel PowerTrench^TMMOSFET

General Description

Features

• 48 A, 60 V. R_DS(ON)= 0.015 Ω @ V_GS= 10 V

R_DS(ON)= 0.018 Ω @ V_GS= 6 V.

This N-Channel MOSFET has been designed specifically

to improve the overall efficiency of DC/DC converters

using either synchronous or conventional switching

PWM controllers.

• Low gate charge.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

R_DS(ON)specifications.

• Fast switching speed.

• High performance trench technology for extremely

low R_DS(ON

)

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

TO-252

Absolute Maximum Ratings T_C=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

I_D

Gate-Source Voltage

±20

Maximum Drain Current -Continuous

(Note 1)

(Note 1a)

Maximum Drain Current -Pulsed

Maximum Power Dissipation @ T_C= 25^oC

T_A= 25^oC

100

P_D

(Note 1)

(Note 1a)

(Note 1b)

2.8

T_A= 25^oC

1.3

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to- Case

(Note 1)

1.8

R_θ

°C/W

Thermal Resistance, Junction-to- Ambient

(Note 1b)

R_θ

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

16mm

Quantity

FDD5670

13’’

2500

FDD5670 Rev. A

1999 Fairchild Semiconductor Corporation

12 3 4 5

中文翻译

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FDD5670 替代型号

型号	品牌	替代类型	描述	数据表
FQB50N06LTM	FAIRCHILD	类似代替	N-Channel QFETÂ® MOSFET 60 V, 52.4 A, 21 mÎ©
STD60NF06T4	STMICROELECTRONICS	功能相似	N-channel 60V - 0.014ohm - 60A - DPAK STripFET II Power MOSFET
STD35NF06LT4	STMICROELECTRONICS	功能相似	N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET⑩

与FDD5670相关器件

型号	品牌	获取价格	描述	数据表
FDD5670_11	FAIRCHILD	获取价格	60V N-Channel PowerTrenchÂ® MOSFET
FDD5670_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 21A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
FDD5680	FAIRCHILD	获取价格	N-Channel, PowerTrench⑩ MOSFET
FDD5680	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，38A，21mΩ
FDD5680	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时
FDD5680_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 38A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
FDD5690	FAIRCHILD	获取价格	60V N-Channel PowerTrench⑩ MOSFET
FDD5690	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，60V，30A，27mΩ
FDD5690_02	FAIRCHILD	获取价格	60V N-Channel PowerTrench㈢ MOSFET
FDD5690_NL	FAIRCHILD	获取价格	暂无描述