FQB5N50CF

更新时间： 2024-10-02 03:37:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	701K
描述
500V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FQB5N50CF 数据手册

May 2006

FRFET

FQB5N50CF

500V N-Channel MOSFET

Features

Description

•

5A, 500V, R_DS(on)

1.55 Ω @V_GS= 10 V

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

Low gate charge ( typical 18nC)

Low Crss ( typical 15pF)

Fast switching

This advanced technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

ciency switched mode power supplies, electronic lamp ballasts

based on half bridge topology.

100% avalanche tested

Improved dv/dt capability

D²-PAK

FQB Series

Absolute Maximum Ratings

Symbol

Parameter

FQB5N50CF

Units

V_DSS

I_D

Drain-Source Voltage

500

Drain Current

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

3.2

(Note 1)

I_DM

Drain Current

V_GSS

E_AS

I_AR

Gate-Source Voltage

± 30

300

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25°C)

9.6

V/ns

4.5

- Derate above 25°C

0.76

-55 to +150

W/°C

°C

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

FQB5N50CF

Units

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

1.3

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

FQB5N50CF Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

中文翻译

下载PDF

与FQB5N50CF相关器件

型号	品牌	获取价格	描述	数据表
FQB5N50CFTF	FAIRCHILD	获取价格	500V N-Channel MOSFET
FQB5N50CFTM	FAIRCHILD	获取价格	500V N-Channel MOSFET
FQB5N50CTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal
FQB5N50CTM	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，500 V，5 A，1.4 Ω，D2PAK
FQB5N50CTM	ROCHESTER	获取价格	暂无描述
FQB5N50TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Met
FQB5N60	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQB5N60C	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQB5N60TM	ROCHESTER	获取价格	5A, 600V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
FQB5N80	FAIRCHILD	获取价格	800V N-Channel MOSFET