是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-263 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.72 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 65 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 150 V | 最大漏极电流 (Abs) (ID): | 6.4 A |
最大漏极电流 (ID): | 6.4 A | 最大漏源导通电阻: | 0.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 63 W |
最大脉冲漏极电流 (IDM): | 25.6 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FQB6N15TM | FAIRCHILD |
功能相似 |
Power Field-Effect Transistor, 6.4A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Met |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQB6N15TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6.4A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Met | |
FQB6N25 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
FQB6N25TM | ROCHESTER |
获取价格 |
5.5A, 250V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | |
FQB6N25TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.5A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal | |
FQB6N40 | FAIRCHILD |
获取价格 |
400V N-Channel MOSFET | |
FQB6N40C | FAIRCHILD |
获取价格 |
400V N-Channel MOSFET | |
FQB6N40CF | FAIRCHILD |
获取价格 |
400V N-Channel MOSFET | |
FQB6N40CFTM | FAIRCHILD |
获取价格 |
400V N-Channel MOSFET | |
FQB6N40CTM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-o | |
FQB6N40CTM | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,400 V,6 A,1.0 Ω,D2PAK |