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FQB65N06TM_NL PDF预览

FQB65N06TM_NL

更新时间: 2024-11-02 13:07:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 670K
描述
Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

FQB65N06TM_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:D2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.37
雪崩能效等级(Eas):650 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):65 A最大漏极电流 (ID):65 A
最大漏源导通电阻:0.016 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
最大脉冲漏极电流 (IDM):260 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQB65N06TM_NL 数据手册

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May 2001  
TM  
QFET  
FQB65N06 / FQI65N06  
60V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as automotive, DC/  
DC converters, and high efficiency switching for power  
management in portable and battery operated products.  
65A, 60V, R  
= 0.016@V = 10 V  
DS(on) GS  
Low gate charge ( typical 48 nC)  
Low Crss ( typical 100 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
D
!
D
"
! "  
"
!
G
"
G
S
D2-PAK  
FQB Series  
I2-PAK  
FQI Series  
G
D
S
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB65N06 / FQI65N06  
Units  
V
V
I
Drain-Source Voltage  
60  
65  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
46.1  
260  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 25  
650  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AS  
65  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
15.0  
7.0  
mJ  
V/ns  
W
AR  
dv/dt  
Power Dissipation (T = 25°C) *  
3.75  
150  
P
A
D
Power Dissipation (T = 25°C)  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.00  
-55 to +175  
W/°C  
°C  
T , T  
J
stg  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
1.00  
40  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2001 Fairchild Semiconductor Corporation  
Rev. A1. May 2001  

FQB65N06TM_NL 替代型号

型号 品牌 替代类型 描述 数据表
FQB65N06 FAIRCHILD

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