Datasheet > FQB5N90_13

FQB5N90_13

更新时间： 2024-10-02 12:33:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	709K
描述
N-Channel QFET MOSFET

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FQB5N90_13 数据手册

April 2013

FQB5N90 / FQI5N90

N-Channel QFET^®MOSFET

900 V, 5.4 A, 2.3 Ω

Description

Features

5.4 A, 900 V, R

I_D= 2.7 A

= 2.3 Ω (Max.)@ V = 10 V,

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor^®’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC), and

electronic lamp ballasts.

•

DS(on)

•

Low Gate Charge (Typ. 31 nC)

Low Crss (Typ. 13 pF)

100% Avalanche Tested

•

RoHS Compliant

! "

I²-PAK

D²-PAK

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB5N90 / FQI5N90

Unit

Drain-Source Voltage

900

5.4

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

3.42

21.6

± 30

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

660

5.4

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

15.8

4.0

V/ns

dv/dt

Power Dissipation (T = 25°C) *

3.13

158

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

1.27

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

FQB5N90 / FQI5N90

Symbol

Parameter

Unit

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient, Max.

0.79

°C/W

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

www.fairchildsemi.com

FQB5N90 / FQI5N90 Rev. C0

12 3 4 5 6 7...9

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