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FQB5N50CTM PDF预览

FQB5N50CTM

更新时间: 2024-11-03 11:12:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 590K
描述
功率 MOSFET,N 沟道,QFET®,500 V,5 A,1.4 Ω,D2PAK

FQB5N50CTM 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:0.97其他特性:FAST SWITCHING
雪崩能效等级(Eas):300 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5 A
最大漏源导通电阻:1.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):73 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQB5N50CTM 数据手册

 浏览型号FQB5N50CTM的Datasheet PDF文件第2页浏览型号FQB5N50CTM的Datasheet PDF文件第3页浏览型号FQB5N50CTM的Datasheet PDF文件第4页浏览型号FQB5N50CTM的Datasheet PDF文件第5页浏览型号FQB5N50CTM的Datasheet PDF文件第6页浏览型号FQB5N50CTM的Datasheet PDF文件第7页 
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