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FQB5N50CTM PDF预览

FQB5N50CTM

更新时间： 2024-11-21 11:12:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 590K
描述
功率 MOSFET，N 沟道，QFET®，500 V，5 A，1.4 Ω，D2PAK

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中文翻译

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FQB5N50CTM 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：0.97其他特性：FAST SWITCHING
雪崩能效等级（Eas）：300 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：500 V
最大漏极电流 (Abs) (ID)：5 A最大漏极电流 (ID)：5 A
最大漏源导通电阻：1.4 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：73 W
最大脉冲漏极电流 (IDM)：20 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FQB5N50CTM 数据手册

 浏览型号FQB5N50CTM的Datasheet PDF文件第2页浏览型号FQB5N50CTM的Datasheet PDF文件第3页浏览型号FQB5N50CTM的Datasheet PDF文件第4页浏览型号FQB5N50CTM的Datasheet PDF文件第5页浏览型号FQB5N50CTM的Datasheet PDF文件第6页浏览型号FQB5N50CTM的Datasheet PDF文件第7页 
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
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中文翻译

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FQB5N90 FAIRCHILD

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FQB5N90_13 FAIRCHILD

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FQB5N90TM ROCHESTER

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 		功率 MOSFET，N 沟道，QFET®，900 V，5.4 A，2.3 Ω，D2PAK
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