是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-263 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.74 | 雪崩能效等级(Eas): | 450 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 900 V | 最大漏极电流 (Abs) (ID): | 3.6 A |
最大漏极电流 (ID): | 3.6 A | 最大漏源导通电阻: | 4.25 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 130 W |
最大脉冲漏极电流 (IDM): | 14.4 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQB3P20 | FAIRCHILD |
获取价格 |
200V P-Channel MOSFET | |
FQB3P20TM | ROCHESTER |
获取价格 |
2.8A, 200V, 2.7ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | |
FQB3P50 | FAIRCHILD |
获取价格 |
500V P-Channel MOSFET | |
FQB3P50TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.7A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Met | |
FQB44N08 | FAIRCHILD |
获取价格 |
80V N-Channel MOSFET | |
FQB44N10 | FAIRCHILD |
获取价格 |
100V N-Channel MOSFET | |
FQB44N10TM | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,100 V,43.5 A,52 mΩ,D2PAK | |
FQB44N10TM_NL | FAIRCHILD |
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Power Field-Effect Transistor, 43.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, | |
FQB45N03L | FAIRCHILD |
获取价格 |
30V LOGIC N-Channel MOSFET | |
FQB45N03LTM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Met |