是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | LEAD FREE, D2PAK-3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.37 |
雪崩能效等级(Eas): | 1124 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (ID): | 45 A | 最大漏源导通电阻: | 0.04 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 180 A | 认证状态: | COMMERCIAL |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQB46N15 | FAIRCHILD |
获取价格 |
150V N-Channel MOSFET | |
FQB46N15TM | ROCHESTER |
获取价格 |
45.6A, 150V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3 | |
FQB47P06 | FAIRCHILD |
获取价格 |
60V P-Channel MOSFET | |
FQB47P06TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Met | |
FQB47P06TM_AM002 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Met | |
FQB47P06TM-AM002 | ONSEMI |
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功率 MOSFET,P 沟道,QFET®,-60 V,-47 A,26 mΩ,D2PAK | |
FQB4N20 | FAIRCHILD |
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200V N-Channel MOSFET | |
FQB4N20L | FAIRCHILD |
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200V LOGIC N-Channel MOSFET | |
FQB4N20LTM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.8A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Met | |
FQB4N20TM | ROCHESTER |
获取价格 |
3.6A, 200V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 |