Datasheet > FQB44N10TM

FQB44N10TM

更新时间： 2024-11-21 11:13:11

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
10页	897K
描述
功率 MOSFET，N 沟道，QFET®，100 V，43.5 A，52 mΩ，D2PAK

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技术参数
数据手册
替代型号

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FQB44N10TM 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	0.93	雪崩能效等级（Eas）：	530 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V	最大漏极电流 (Abs) (ID)：	43.5 A
最大漏极电流 (ID)：	43.5 A	最大漏源导通电阻：	0.039 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-263AB
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	146 W	最大脉冲漏极电流 (IDM)：	174 A
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

FQB44N10TM 数据手册

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FQB44N10TM 替代型号

型号	品牌	替代类型	描述	数据表
FQB44N10TM_NL	FAIRCHILD	功能相似	Power Field-Effect Transistor, 43.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon,
FQB44N10	FAIRCHILD	功能相似	100V N-Channel MOSFET

与FQB44N10TM相关器件

型号	品牌	获取价格	描述	数据表
FQB44N10TM_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 43.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon,
FQB45N03L	FAIRCHILD	获取价格	30V LOGIC N-Channel MOSFET
FQB45N03LTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 45A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Met
FQB45N15V2	FAIRCHILD	获取价格	150V N-Channel MOSFET
FQB45N15V2TM	ROCHESTER	获取价格	45A, 150V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, D2PAK-3
FQB46N15	FAIRCHILD	获取价格	150V N-Channel MOSFET
FQB46N15TM	ROCHESTER	获取价格	45.6A, 150V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3
FQB47P06	FAIRCHILD	获取价格	60V P-Channel MOSFET
FQB47P06TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Met
FQB47P06TM_AM002	FAIRCHILD	获取价格	Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Met

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