FQB3N80TM

更新时间： 2024-11-01 12:58:31

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飞兆/仙童 - FAIRCHILD		/
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数据手册

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FQB3N80TM 数据手册

September 2000

QFET

FQB3N80 / FQI3N80

800V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

•

3.0A, 800V, R

= 5.0Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 15 nC)

Low Crss ( typical 7.0 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

D²-PAK

FQB Series

I²-PAK

FQI Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB3N80 / FQI3N80

Units

Drain-Source Voltage

800

3.0

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

1.9

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

320

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

3.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

10.7

4.0

V/ns

dv/dt

Power Dissipation (T = 25°C) *

3.13

107

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.85

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

1.17

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, September 2000

12 3 4 5 6 7...9

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