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FQB3N60C PDF预览

FQB3N60C

更新时间: 2024-11-20 03:37:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 870K
描述
600V N-Channel MOSFET

FQB3N60C 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
风险等级:5.74Is Samacsys:N
雪崩能效等级(Eas):150 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):3 A
最大漏源导通电阻:3.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):12 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQB3N60C 数据手册

 浏览型号FQB3N60C的Datasheet PDF文件第2页浏览型号FQB3N60C的Datasheet PDF文件第3页浏览型号FQB3N60C的Datasheet PDF文件第4页浏览型号FQB3N60C的Datasheet PDF文件第5页浏览型号FQB3N60C的Datasheet PDF文件第6页浏览型号FQB3N60C的Datasheet PDF文件第7页 
May 2006  
TM  
QFET  
FQB3N60C  
600V N-Channel MOSFET  
Features  
Description  
3A, 600V, RDS(on) = 3.4Ω @ VGS = 10 V  
Low gate charge ( typical 10.5 nC)  
Low Crss ( typical 5 pF)  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary, planar  
stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche  
and commutation mode. These devices are well suited for high  
efficiency switched mode power supplies, active power factor  
correction, electronic lamp ballasts based on half bridge  
topology.  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
D
G
D2-PAK  
FQB Series  
G
S
S
Absolute Maximum Ratings  
Symbol  
Parameter  
FQB3N60C  
Unit  
VDSS  
Drain-Source Voltage  
Drain Current  
600  
V
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
3
1.8  
A
A
(Note 1)  
(Note 2)  
IDM  
Drain Current  
- Pulsed  
12  
±30  
150  
3
A
V
VGSS  
EAS  
IAR  
Gate-Source voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
(Note 1)  
(Note 1)  
(Note 3)  
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
7.5  
4.5  
mJ  
V/ns  
Power Dissipation  
(TC = 25°C)  
75  
W
- Derate above 25°C  
0.62  
W/°C  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
300  
°C  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
°C  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
1.67  
40  
Unit  
°C/W  
°C/W  
°C/W  
RθJC  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient*  
Thermal Resistance, Junction-to-Ambient  
--  
--  
--  
RθJA  
RθJA  
*
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2006 Fairchild Semiconductor Corporation  
FQB3N60C REV. A1  
1
www.fairchildsemi.com  

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