生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.74 | Is Samacsys: | N |
雪崩能效等级(Eas): | 150 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 3.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 12 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQB3N60C_0605 | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
FQB3N60CTM | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
FQB3N60TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal | |
FQB3N80 | FAIRCHILD |
获取价格 |
800V N-Channel MOSFET | |
FQB3N80TM | FAIRCHILD |
获取价格 |
暂无描述 | |
FQB3N90 | FAIRCHILD |
获取价格 |
900V N-Channel MOSFET | |
FQB3P20 | FAIRCHILD |
获取价格 |
200V P-Channel MOSFET | |
FQB3P20TM | ROCHESTER |
获取价格 |
2.8A, 200V, 2.7ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | |
FQB3P50 | FAIRCHILD |
获取价格 |
500V P-Channel MOSFET | |
FQB3P50TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.7A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Met |