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FQB32N20CTM PDF预览

FQB32N20CTM

更新时间: 2024-11-01 19:59:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
9页 906K
描述
Power Field-Effect Transistor, 28A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

FQB32N20CTM 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.82
其他特性:FAST SWITCHING雪崩能效等级(Eas):955 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):28 A
最大漏极电流 (ID):28 A最大漏源导通电阻:0.082 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):156 W最大脉冲漏极电流 (IDM):112 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQB32N20CTM 数据手册

 浏览型号FQB32N20CTM的Datasheet PDF文件第2页浏览型号FQB32N20CTM的Datasheet PDF文件第3页浏览型号FQB32N20CTM的Datasheet PDF文件第4页浏览型号FQB32N20CTM的Datasheet PDF文件第5页浏览型号FQB32N20CTM的Datasheet PDF文件第6页浏览型号FQB32N20CTM的Datasheet PDF文件第7页 
QFET®  
FQB32N20C/FQI32N20C  
200V N-Channel MOSFET  
General Description  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
Features  
28A, 200V, RDS(on) = 0.082@VGS = 10 V  
Low gate charge ( typical 82.5 nC)  
Low Crss ( typical 185 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switched mode power supplies,  
active power factor correction, electronic lamp ballasts  
based on half bridge topology.  
D
{
D
I2-PAK  
{
G
D2-PAK  
G
S
FQI Series  
FQB Series  
G D S  
{
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
VDSS  
Parameter  
FQB32N20C / FQI32N20C  
Units  
V
A
A
A
Drain-Source Voltage  
Drain Current  
200  
28.0  
17.8  
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
IDM  
(Note 1)  
Drain Current  
112  
VGSS  
EAS  
IAR  
EAR  
dv/dt  
Gate-Source Voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TA = 25°C)*  
± 30  
955  
28.0  
15.6  
5.5  
3.13  
156  
V
mJ  
A
mJ  
V/ns  
W
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
PD  
Power Dissipation (TC = 25°C)  
W
- Derate above 25°C  
Operating and Storage Temperature Range  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
1.25  
-55 to +150  
W/°C  
°C  
TJ, TSTG  
TL  
300  
°C  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
--  
Max  
0.8  
40  
Units  
°C/W  
°C/W  
°C/W  
RθJC  
RθJA  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient*  
Thermal Resistance, Junction-to-Ambient  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2004 Fairchild Semiconductor Corporation  
Rev. A, March 2004  

FQB32N20CTM 替代型号

型号 品牌 替代类型 描述 数据表
STB30NF20 STMICROELECTRONICS

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