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FQB34P10TM-F085 PDF预览

FQB34P10TM-F085

更新时间: 2024-11-24 12:56:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 1202K
描述
-33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V

FQB34P10TM-F085 数据手册

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March 2012  
TM  
QFET  
FQB34P10TM_F085  
100V P-Channel MOSFET  
General Description  
Features  
These P-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
-33.5A, -100V, R  
= 0.06@V = -10 V  
DS(on) GS  
Low gate charge ( typical 85 nC)  
Low Crss ( typical 170 pF)  
Fast switching  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as audio amplifier,  
high efficiency switching DC/DC converters, and DC motor  
control.  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
Qualified to AEC Q101  
RoHS Compliant  
S
!
D
G
!
D2-PAK  
FQB Series  
G
S
!
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB34P10TM_F085  
Units  
V
A
A
A
V
I
Drain-Source Voltage  
Drain Current  
-100  
-33.5  
-23.5  
-134  
DSS  
- Continuous (T = 25°C)  
D
C
- Continuous (T = 100°C)  
C
I
(Note 1)  
Drain Current  
- Pulsed  
DM  
V
E
I
E
dv/dt  
Gate-Source Voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (T = 25°C) *  
± 25  
V
mJ  
A
mJ  
V/ns  
W
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
2200  
-33.5  
15.5  
-6.0  
3.75  
AR  
AR  
P
A
D
Power Dissipation (T = 25°C)  
155  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.03  
-55 to +175  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
T
300  
°C  
L
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
--  
Max  
0.97  
40  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2012 Fairchild Semiconductor Corporation  
FQB34P10TM_F085 Rev. C1  
1
www.fairchildsemi.com  

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