March 2013
FQB34P10 / FQI34P10
P-Channel QFET MOSFET
-100 V, -33.5 A, 60 mΩ
Features
Description
This P-Channel enhancement mode power MOSFET is
•
-33.5 A, -100 V, RDS(on) = 60 mΩ (max) @VGS = -10 V,
®
produced using Fairchild Semiconductor ’s proprietary
ID = -16.75 A
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
•
•
•
•
Low Gate Charge (Typ. 85 nC)
Low Crss (Typ. 170 pF)
100% Avalanche Tested
175°C Maximum Junction Temperature Rating
S
D
●
●
G
▶
▲
●
I2-PAK
FQI Series
D2-PAK
FQB Series
G
S
G D S
D
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
VDSS
Parameter
FQB34P10 / FQI34P10
Unit
V
Drain-Source Voltage
-100
-33.5
-23.5
-134
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
A
A
IDM
(Note 1)
Drain Current
A
VGSS
EAS
IAR
Gate-Source Voltage
25
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
2200
-33.5
15.5
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
mJ
V/ns
W
-6.0
3.75
Power Dissipation (TC = 25°C)
155
W
- Derate above 25°C
Operating and Storage Temperature Range
1.03
W/°C
°C
TJ, TSTG
TL
-55 to +175
Maximum lead temperature for soldering purposes,
300
°C
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ
--
Max
0.97
40
Unit
°C/W
°C/W
°C/W
RθJC
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
--
--
62.5
* When mounted on the minimum pad size recommended (PCB Mount)
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©2000 Fairchild Semiconductor Corporation
FQB34P10 / FQI34P10 Rev. C0