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FQB34P10_13 PDF预览

FQB34P10_13

更新时间: 2024-11-20 12:34:03
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飞兆/仙童 - FAIRCHILD /
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9页 526K
描述
P-Channel QFET MOSFET

FQB34P10_13 数据手册

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March 2013  
FQB34P10 / FQI34P10  
P-Channel QFET MOSFET  
-100 V, -33.5 A, 60 mΩ  
Features  
Description  
This P-Channel enhancement mode power MOSFET is  
-33.5 A, -100 V, RDS(on) = 60 mΩ (max) @VGS = -10 V,  
®
produced using Fairchild Semiconductor ’s proprietary  
ID = -16.75 A  
planar stripe and DMOS technology. This advanced  
MOSFET technology has been especially tailored to reduce  
on-state resistance, and to provide superior switching  
performance and high avalanche energy strength. These  
devices are suitable for switched mode power supplies,  
audio amplifier, DC motor control, and variable switching  
power applications.  
Low Gate Charge (Typ. 85 nC)  
Low Crss (Typ. 170 pF)  
100% Avalanche Tested  
175°C Maximum Junction Temperature Rating  
S
D
G  
I2-PAK  
FQI Series  
D2-PAK  
FQB Series  
G
S
G D S  
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
VDSS  
Parameter  
FQB34P10 / FQI34P10  
Unit  
V
Drain-Source Voltage  
-100  
-33.5  
-23.5  
-134  
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
Drain Current  
A
A
IDM  
(Note 1)  
Drain Current  
A
VGSS  
EAS  
IAR  
Gate-Source Voltage  
25  
V
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
2200  
-33.5  
15.5  
mJ  
A
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TA = 25°C) *  
mJ  
V/ns  
W
-6.0  
3.75  
Power Dissipation (TC = 25°C)  
155  
W
- Derate above 25°C  
Operating and Storage Temperature Range  
1.03  
W/°C  
°C  
TJ, TSTG  
TL  
-55 to +175  
Maximum lead temperature for soldering purposes,  
300  
°C  
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
0.97  
40  
Unit  
°C/W  
°C/W  
°C/W  
RθJC  
RθJA  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
--  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
www.fairchildsemi.com  
©2000 Fairchild Semiconductor Corporation  
FQB34P10 / FQI34P10 Rev. C0  

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