Datasheet > FQB34N20LTM

FQB34N20LTM

更新时间： 2024-11-02 11:14:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	954K
描述
功率 MOSFET，N 沟道，逻辑电平，QFET®，200 V，31 A，80 mΩ，D2PAK

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技术参数
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替代型号

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FQB34N20LTM 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	1 week	风险等级：	0.74
雪崩能效等级（Eas）：	640 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	200 V
最大漏极电流 (ID)：	31 A	最大漏源导通电阻：	0.08 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	67 pF
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	功耗环境最大值：	3.13 W
最大功率耗散 (Abs)：	180 W	最大脉冲漏极电流 (IDM)：	124 A
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	最大关闭时间（toff）：	1100 ns
最大开启时间（吨）：	1150 ns	Base Number Matches：	1

FQB34N20LTM 数据手册

Is Now Part of

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FQB34N20LTM 替代型号

型号	品牌	替代类型	描述	数据表
PSMN070-200B,118	NXP	功能相似	N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin
FQB34N20LTM	FAIRCHILD	功能相似	暂无描述
IRFS23N20D	INFINEON	功能相似	Power MOSFET(Vdss=200V, Rds(on)max=0.10ohm, Id=24A)

与FQB34N20LTM相关器件

型号	品牌	获取价格	描述	数据表
FQB34N20TM_AM002	FAIRCHILD	获取价格	Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Me
FQB34N20TM-AM002	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，200 V，31 A，75 mΩ，D2PAK
FQB34P10	FAIRCHILD	获取价格	100V P-Channel MOSFET
FQB34P10_13	FAIRCHILD	获取价格	P-Channel QFET MOSFET
FQB34P10TM	FAIRCHILD	获取价格	100V P-Channel MOSFET
FQB34P10TM	ONSEMI	获取价格	P 沟道 QFET® MOSFET -100V，-33.5A，60mΩ
FQB34P10TM-F085	FAIRCHILD	获取价格	-33.5A, -100V, RDS(on) = 0.06Î© @VGS = -10 V
FQB3N25	FAIRCHILD	获取价格	250V N-Channel MOSFET
FQB3N30	FAIRCHILD	获取价格	300V N-Channel MOSFET
FQB3N30TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.2A I(D), 300V, 2.2ohm, 1-Element, N-Channel, Silicon, Met

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