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FQB34N20LTM PDF预览

FQB34N20LTM

更新时间： 2024-11-25 11:14:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 954K
描述
功率 MOSFET，N 沟道，逻辑电平，QFET®，200 V，31 A，80 mΩ，D2PAK

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中文翻译

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FQB34N20LTM 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.74
雪崩能效等级（Eas）：640 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏极电流 (ID)：31 A最大漏源导通电阻：0.08 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：67 pF
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL功耗环境最大值：3.13 W
最大功率耗散 (Abs)：180 W最大脉冲漏极电流 (IDM)：124 A
认证状态：Not Qualified表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON最大关闭时间（toff）：1100 ns
最大开启时间（吨）：1150 nsBase Number Matches：1

FQB34N20LTM 数据手册

 浏览型号FQB34N20LTM的Datasheet PDF文件第2页浏览型号FQB34N20LTM的Datasheet PDF文件第3页浏览型号FQB34N20LTM的Datasheet PDF文件第4页浏览型号FQB34N20LTM的Datasheet PDF文件第5页浏览型号FQB34N20LTM的Datasheet PDF文件第6页浏览型号FQB34N20LTM的Datasheet PDF文件第7页 
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中文翻译

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FQB34N20LTM 替代型号

型号 品牌 替代类型 描述 数据表
PSMN070-200B,118 NXP

功能相似

 N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin
FQB34N20LTM FAIRCHILD

功能相似

 暂无描述
IRFS23N20D INFINEON

功能相似

 Power MOSFET(Vdss=200V, Rds(on)max=0.10ohm, Id=24A)

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