Datasheet > FQB33N10TM

FQB33N10TM

更新时间： 2024-11-21 11:14:43

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
10页	1055K
描述
功率 MOSFET，N 沟道，QFET®，100 V，33 A，52 mΩ，D2PAK

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中文翻译

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数据手册
替代型号

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FQB33N10TM 数据手册

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中文翻译

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FQB33N10TM 替代型号

型号	品牌	替代类型	描述	数据表
FQB33N10	FAIRCHILD	功能相似	100V N-Channel MOSFET

与FQB33N10TM相关器件

型号	品牌	获取价格	描述	数据表
FQB34N20	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQB34N20L	FAIRCHILD	获取价格	200V LOGIC N-Channel MOSFET
FQB34N20LTM	ONSEMI	获取价格	功率 MOSFET，N 沟道，逻辑电平，QFET®，200 V，31 A，80 mΩ，D2
FQB34N20LTM	FAIRCHILD	获取价格	暂无描述
FQB34N20TM_AM002	FAIRCHILD	获取价格	Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Me
FQB34N20TM-AM002	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，200 V，31 A，75 mΩ，D2PAK
FQB34P10	FAIRCHILD	获取价格	100V P-Channel MOSFET
FQB34P10_13	FAIRCHILD	获取价格	P-Channel QFET MOSFET
FQB34P10TM	FAIRCHILD	获取价格	100V P-Channel MOSFET
FQB34P10TM	ONSEMI	获取价格	P 沟道 QFET® MOSFET -100V，-33.5A，60mΩ

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