Datasheet > FQB33N10_13

FQB33N10_13

更新时间： 2024-11-20 12:34:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	1231K
描述
N-Channel QFET MOSFET

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FQB33N10_13 数据手册

March 2013

FQB33N10 / FQI33N10

N-Channel QFET MOSFET

100 V, 33 A, 52 mΩ

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor®’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to reduce

on-state resistance, and to provide superior switching

performance and high avalanche energy strength. These

devices are suitable for switched mode power supplies,

audio amplifier, DC motor control, and variable switching

power applications.

Features

•

33 A, 100 V, R_DS(on)= 52 mΩ (Max) @V_GS= 10 V,

I_D= 16.5 A

•

Low Gate Charge (Typ. 38 nC)

Low Crss (Typ. 62 pF)

100% Avalanche Tested

175°C Maximum Junction Temperature Rating

! "

G !

D²-PAK

FQB Series

I²-PAK

FQI Series

Absolute Maximum Ratings

ꢀꢀ

T = 25°C unless otherwise noted

Symbol

Parameter

FQB33N10 / FQI33N10

Unit

Drain-Source Voltage

100

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

132

Gate-Source Voltage

±ꢀ25

435

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

12.7

6.0

V/ns

dv/dt

Power Dissipation (T = 25°C) *

3.75

127

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.85

-55 to +175

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8ꢀ from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

1.18

Unit

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

°CꢁW

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

www.fairchildsemi.com

FQB33N10 / FQI33N10 Rev. C0

12 3 4 5 6 7...9

中文翻译

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