March 2013
FQB33N10 / FQI33N10
N-Channel QFET MOSFET
100 V, 33 A, 52 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
•
33 A, 100 V, RDS(on) = 52 mΩ (Max) @VGS = 10 V,
ID = 16.5 A
•
•
•
•
Low Gate Charge (Typ. 38 nC)
Low Crss (Typ. 62 pF)
100% Avalanche Tested
175°C Maximum Junction Temperature Rating
D
!
D
"
! "
"
G !
"
G
S
D2-PAK
FQB Series
I2-PAK
FQI Series
G
D
S
!
S
Absolute Maximum Ratings
ꢀꢀ
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQB33N10 / FQI33N10
Unit
V
V
I
Drain-Source Voltage
100
33
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
23
A
C
I
(Note 1)
Drain Current
- Pulsed
132
A
DM
V
E
I
Gate-Source Voltage
±ꢀ25
435
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
AS
33
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
12.7
6.0
mJ
V/ns
W
AR
dv/dt
Power Dissipation (T = 25°C) *
3.75
127
P
A
D
Power Dissipation (T = 25°C)
W
C
- Derate above 25°C
Operating and Storage Temperature Range
0.85
-55 to +175
W/°C
°C
T , T
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8ꢀ from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ
--
Max
1.18
40
Unit
R
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
°CꢁW
°CꢁW
°CꢁW
θ
θ
θ
JC
JA
JA
--
--
62.5
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FQB33N10 / FQI33N10 Rev. C0