FQB2N60

更新时间： 2024-09-15 22:25:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	582K
描述
600V N-Channel MOSFET

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中文翻译

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数据手册
替代型号

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FQB2N60 数据手册

April 2000

QFET

FQB2N60 / FQI2N60

600V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

•

2.4A, 600V, R

= 4.7Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 9.0 nC)

Low Crss ( typical 5.0 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

! "

G !

D²-PAK

FQB Series

I²-PAK

FQI Series

Absolute Maximum Ratings

ꢀꢀ

T = 25°C unless otherwise noted

Symbol

Parameter

FQB2N60 / FQI2N60

Units

Drain-Source Voltage

600

2.4

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

1.5

(Note 1)

Drain Current

- Pulsed

9.6

Gate-Source Voltage

±ꢀ30

140

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

2.4

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

6.4

V/ns

dv/dt

4.5

Power Dissipation (T = 25°C) *

3.13

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.51

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8ꢀ from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

Units

°CꢁW

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

1.95

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, April 2000

12 3 4 5 6 7...9

中文翻译

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FQB2N60 替代型号

型号	品牌	替代类型	描述	数据表
FQB2N60TM	FAIRCHILD	功能相似	暂无描述
FQD2N60C	FAIRCHILD	功能相似	600V N-Channel MOSFET

与FQB2N60相关器件

型号	品牌	获取价格	描述	数据表
FQB2N60TM	FAIRCHILD	获取价格	暂无描述
FQB2N80	FAIRCHILD	获取价格	800V N-Channel MOSFET
FQB2N90	FAIRCHILD	获取价格	900V N-Channel MOSFET
FQB2N90TM	ROCHESTER	获取价格	2.2A, 900V, 7.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
FQB2NA90	FAIRCHILD	获取价格	900V N-Channel MOSFET
FQB2P25	FAIRCHILD	获取价格	250V P-Channel MOSFET
FQB2P25TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.3A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal
FQB2P40	FAIRCHILD	获取价格	400V P-Channel MOSFET
FQB2P40TM	ROCHESTER	获取价格	2A, 400V, 6.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
FQB30N06	FAIRCHILD	获取价格	60V N-Channel MOSFET