Datasheet > FQB30N06LTM

FQB30N06LTM

更新时间： 2024-11-03 11:10:35

品牌	Logo	应用领域
安森美 - ONSEMI		PC 开关脉冲晶体管
页数	文件大小	规格书
10页	1226K
描述
功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，32 A，35mΩ，D2PAK

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技术参数
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替代型号

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FQB30N06LTM 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	4 weeks	风险等级：	0.95
Samacsys Confidence：	3	Samacsys Status：	Released
Samacsys PartID：	167409	Samacsys Pin Count：	4
Samacsys Part Category：	Integrated Circuit	Samacsys Package Category：	TO-XXX (Inc. DPAK)
Samacsys Footprint Name：	TO263(DDPAK)	Samacsys Released Date：	2015-04-13 16:43:49
Is Samacsys：	N	雪崩能效等级（Eas）：	350 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (Abs) (ID)：	32 A
最大漏极电流 (ID)：	32 A	最大漏源导通电阻：	0.045 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-263AB
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	79 W	最大脉冲漏极电流 (IDM)：	128 A
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

FQB30N06LTM 数据手册

Is Now Part of

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FQB30N06LTM 替代型号

型号	品牌	替代类型	描述	数据表
FQB30N06L	FAIRCHILD	功能相似	60V LOGIC N-Channel MOSFET
FQB30N06	FAIRCHILD	功能相似	60V N-Channel MOSFET

与FQB30N06LTM相关器件

型号	品牌	获取价格	描述	数据表
FQB32N12V2	FAIRCHILD	获取价格	120V N-Channel MOSFET
FQB32N12V2TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 32A I(D), 120V, 0.05ohm, 1-Element, N-Channel, Silicon, Met
FQB32N20C	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQB32N20CTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 28A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Me
FQB33N10	FAIRCHILD	获取价格	100V N-Channel MOSFET
FQB33N10_04	FAIRCHILD	获取价格	100V N-Channel MOSFET
FQB33N10_13	FAIRCHILD	获取价格	N-Channel QFET MOSFET
FQB33N10L	FAIRCHILD	获取价格	100V LOGIC N-Channel MOSFET
FQB33N10LTM	ONSEMI	获取价格	功率 MOSFET，N 沟道，逻辑电平，QFET®，100 V，33 A，52 mΩ，D2
FQB33N10TM	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，100 V，33 A，52 mΩ，D2PAK

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