型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQB2P25TM | FAIRCHILD |
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Power Field-Effect Transistor, 2.3A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal | |
FQB2P40 | FAIRCHILD |
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400V P-Channel MOSFET | |
FQB2P40TM | ROCHESTER |
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2A, 400V, 6.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | |
FQB30N06 | FAIRCHILD |
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60V N-Channel MOSFET | |
FQB30N06L | FAIRCHILD |
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60V LOGIC N-Channel MOSFET | |
FQB30N06LTM | ONSEMI |
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功率 MOSFET,N 沟道,逻辑电平,QFET®,60 V,32 A,35mΩ,D2PA | |
FQB32N12V2 | FAIRCHILD |
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120V N-Channel MOSFET | |
FQB32N12V2TM | FAIRCHILD |
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Power Field-Effect Transistor, 32A I(D), 120V, 0.05ohm, 1-Element, N-Channel, Silicon, Met | |
FQB32N20C | FAIRCHILD |
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200V N-Channel MOSFET | |
FQB32N20CTM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Me |