Datasheet > FGH60T65SQD-F155

FGH60T65SQD-F155

更新时间： 2023-09-03 20:27:18

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
10页	557K
描述
IGBT，650V，60A，场截止沟槽

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中文翻译

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FGH60T65SQD-F155 数据手册

IGBT - Field Stop, Trench

650 V, 60 A

FGH60T65SQD-F155

Description

Using novel field stop IGBT technology, ON Semiconductor’s new

series of field stop 4 generation IGBTs offer the optimum

www.onsemi.com

performance for solar inverter, UPS, welder, telecom, ESS and PFC

applications where low conduction and switching losses are essential.

CES

Features

650 V

60 A

• Max Junction Temperature 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: V

= 1.6 V (Typ.) @ I = 60 A

CE(sat)

• 100% of the Parts Tested for ILM(1)

• High Input Impedance

• Fast Switching

• Tighten Parameter Distribution

• This Device is Pb−Free and is RoHS Compliant

Applications

• Solar Inverter, UPS, Welder, Telecom, ESS, PFC

COLLECTOR

(FLANGE)

TO−247−3LD

CASE 340CH

MARKING DIAGRAM

$Y&Z&3&K

FGH60T65

SQD

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

FGH60T65SQD

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

FGH60T65SQD−F155/D

November, 2019 − Rev. 3

12 3 4 5 6 7...10

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