Datasheet > FGH75T65UPD-F155

FGH75T65UPD-F155

更新时间： 2023-09-03 20:30:38

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
10页	600K
描述
650V, 75A，场截止沟道IGBT

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数据手册

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FGH75T65UPD-F155 数据手册

IGBT - Field Stop, Trench

650 V, 75 A

FGH75T65UPD,

FGH75T65UPD-F155

Description

www.onsemi.com

Using innovative field stop trench IGBT technology,

ON Semiconductor’s new series of field−stop trench IGBTs offer

optimum performance for solar inverter, UPS, welder, and digital

power genera−tor where low conduction and switching losses are

essential.

Features

• Maximum Junction Temperature: T = 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: V

= 1.65 V(Typ.) @ I = 75 A

CE(sat)

• 100% of Parts Tested I

• High Input Impedance

• Tightened Parameter Distribution

• Short Circuit Ruggedness > 5 ꢀ s @ 25°C

TO−247−3LD

CASE 340CK

TO−247−3LD

CASE 340CH

• These Devices are Pb−Free and are RoHS Compliant

FGH75T65UPD

FGH75T65UPD−F155

Applications

• Solar Inverter, UPS, Digital Power Generator

MARKING DIAGRAMS

$Y&Z&3&K

FGH75T65

UPD

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

FGH75T65UPD

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Publication Order Number:

April, 2020 − Rev. 3

FGH75T65UPD/D

12 3 4 5 6 7...10

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