Datasheet > FGHL50T65SQDT

FGHL50T65SQDT

更新时间： 2023-09-03 20:33:38

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
9页	389K
描述
IGBT, 650 V, 50 A Field Stop Trench

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FGHL50T65SQDT 数据手册

IGBT - Field Stop, Trench

650 V, 50 A

Product Preview

FGHL50T65SQDT

Using novel field stop IGBT technology, ON Semiconductor’s new

series of field stop 4th generation IGBTs offer the optimum

performance for solar inverter, UPS, welder, telecom, ESS and PFC

applications where low conduction and switching losses are essential.

www.onsemi.com

50 A, 650 V

CESat

= 1.47 V (Typ.)

Features

• Maximum Junction Temperature : T = 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: V

= 1.47 V (Typ.) @ I = 50 A

• 100% of the Parts tested for I (1)

CE(Sat)

• High Input Impedance

• Fast Switching

• Tighten Parameter Distribution

• This Device is Pb−Free and is RoHS Compliant

Typical Applications

• Solar Inverter, UPS, Welder, Telecom, ESS, PFC

Table 1. MAXIMUM RATING

TO−247−3LD

CASE 340CX

Symbol

Rating

Value

Unit

CES

GES

Collector to Emitter Voltage

650

MARKING DIAGRAM

Gate to Emitter Voltage

Transient Gate to Emitter Voltage

Collector Current

@ T = 25°C

100

@ T = 100°C

Pulsed Collector Current (Note 1)

Pulsed Collector Current (Note 2)

200

ON AYWWZZ

FGHL50T65

SQDT

Diode Forward Current

@ T = 25°C

@ T = 100°C

Pulsed Diode Maximum Forward Current

300

Maximum Power Dissipation @ T = 25°C

268

134

@ T = 100°C

T , T

Operating Junction / Storage Temperature −55 to +175

°C

STG

Range

FGHL50T65SQDT = Specific Device Code

Maximum Lead Temp. for Soldering

265

= Assembly Location

= Year

Purposes, 1/8” from case for 5 seconds

= Work Week

= Assembly Lot Number

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. VCC = 400 V, VGE = 15 V, IC = 200 A, RG = 3 W, Inductive Load, 100% Tested

2. Repetitive rating: pulse width limited by max. Junction temperature

ORDERING INFORMATION

Device

Package

Shipping

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

FGHL50T65SQDT

TO−247−3L

30 Units / Rail

Publication Order Number:

February, 2020 − Rev. P0

FGHL50T65SQDT/D

12 3 4 5 6 7...9

中文翻译

下载PDF

与FGHL50T65SQDT相关器件

型号	品牌	获取价格	描述	数据表
FGHL75T65LQDT	ONSEMI	获取价格	IGBT - 650 V 75 A FS4 low Vce(sat) IGBT with full rated copack diode
FGHL75T65LQDTL4	ONSEMI	获取价格	IGBT - 650 V 75 A FS4 low Vce(sat) IGBT with full rated copack diode
FGHL75T65MQD	ONSEMI	获取价格	IGBT - 650 V 75 A FS4 medium switching speed IGBT
FGHL75T65MQDT	ONSEMI	获取价格	IGBT - 650 V 75 A FS4 medium switching speed IGBT with full rated copack diode
FGHL75T65MQDTL4	ONSEMI	获取价格	IGBT - 650 V 75 A FS4 medium switching speed IGBT with full rated copack diode
FGI.1B.308.CLAD52Z	ETC	获取价格	CONN PLUG MALE 8POS SOLDER CUP
FGI.1B.308.CLAD62Z	ETC	获取价格	CONN PLUG MALE 8POS SOLDER CUP
FGI.1B.308.CLAD72Z	ETC	获取价格	CONN PLUG MALE 8POS SOLDER CUP
FGI.1B.308.CYCD62Z	ETC	获取价格	CONN PLUG MALE 8POS GOLD CRIMP
FGI3040G2-F085	ONSEMI	获取价格	400 V、26 A、1.35 V、300 mJ、TO-262EcoSPARK® II、N

与FGHL50T65SQDT相关文章

LM317T数据手册解读：产品特性、应用、封装与引脚详解
2024-06-14

15
一文带你了解?DB3二极管好坏判断、参数信息、替代推荐
2024-06-14

18
LM358DR数据手册：引脚说明、电气参数及替换型号推荐
2024-06-14

11
OP07CP数据手册解读：引脚信息、电子参数
2024-06-14

17

产品中心

服务支持

精选活动

关于我们

帮助中心

FGHL50T65SQDT

FGHL50T65SQDT 数据手册

与FGHL50T65SQDT相关器件

与FGHL50T65SQDT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FGHL50T65SQDT

FGHL50T65SQDT 数据手册

与FGHL50T65SQDT相关器件

与FGHL50T65SQDT相关文章

您还可以找

您在本页遇到什么问题？