Datasheet > FGHL75T65MQD

FGHL75T65MQD

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
9页	342K
描述
IGBT - 650 V 75 A FS4 medium switching speed IGBT

阅读下载

中文翻译

获取价格

数据手册

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FGHL75T65MQD 数据手册

Field Stop Trench IGBT

650 V, 75 A

FGHL75T65MQD

Field stop 4th generation mid speed IGBT technology and Full

current rated copak Diode technology.

Features

www.onsemi.com

• Maximum Junction Temperature: T = 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

TYP

I MAX

CES

CE(sat)

650 V

1.45 V

75 A

• Low Saturation Voltage: V

= 1.45 V (Typ.) @ I = 75 A

CE(sat)

• 100% of the Parts are Tested for I (Note 2)

• Smooth & Optimized Switching

• Tight Parameter Distribution

• RoHS Compliant

Typical Applications

• Solar Inverter

• UPS, ESS

• PFC, Converters

MAXIMUM RATINGS

Parameter

Collector−to−Emitter Voltage

Gate−to−Emitter Voltage

Symbol

Value

650

Unit

CES

GES

TO−247 LONG LEADS

Transient Gate−to−Emitter Voltage

Collector Current (Note 1)

CASE 340CX

= 25°C

= 100°C

MARKING DIAGRAM

Pulsed Collector Current (Note 2)

Pulsed Collector Current (Note 3)

Diode Forward Current (Note 1)

300

= 25°C

= 65°C

$Y&Z&3&K

FGHL

75T65MQD

Pulsed Diode Maximum Forward Current

300

FM(2)

Non−Repetitive Forward Surge Current

F,SM

(Half−Sine Pulse, t = 8.3 ms, T = 25°C)

255

225

(Half−Sine Pulse, t = 8.3 ms, T = 150°C)

Maximum Power Dissipation

= 25°C

375

188

= ON Semiconductor Logo

= Assembly Plant Code

= 3−Digit Date Code

= 100°C

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

= 2−Digit Lot Traceability Code

FGHL75T65MQD = Specific Device Code

Maximum Lead Temperature for Soldering

Purposes (1/8″ from case for 5 s)

260

ORDERING INFORMATION

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Value limit by bond wire

Device

Package

Shipping

FGHL75T65MQD TO−247−3L

30 Units / Rail

2. V = 400 V, V = 15 V, I = 300 A, R = 14 W, Inductive Load, 100% Tested

3. Repetitive rating: Pulse width limited by max. junction temperature

Publication Order Number:

February, 2020 − Rev. 1

FGHL75T65MQD/D

12 3 4 5 6 7...9

中文翻译

下载PDF

与FGHL75T65MQD相关器件

型号	品牌	获取价格	描述	数据表
FGHL75T65MQDT	ONSEMI	获取价格	IGBT - 650 V 75 A FS4 medium switching speed IGBT with full rated copack diode
FGHL75T65MQDTL4	ONSEMI	获取价格	IGBT - 650 V 75 A FS4 medium switching speed IGBT with full rated copack diode
FGI.1B.308.CLAD52Z	ETC	获取价格	CONN PLUG MALE 8POS SOLDER CUP
FGI.1B.308.CLAD62Z	ETC	获取价格	CONN PLUG MALE 8POS SOLDER CUP
FGI.1B.308.CLAD72Z	ETC	获取价格	CONN PLUG MALE 8POS SOLDER CUP
FGI.1B.308.CYCD62Z	ETC	获取价格	CONN PLUG MALE 8POS GOLD CRIMP
FGI3040G2-F085	ONSEMI	获取价格	400 V、26 A、1.35 V、300 mJ、TO-262EcoSPARK® II、N
FGI3236	FAIRCHILD	获取价格	EcoSPARK 320mJ, 360V, N-Channel Ignition IGBT
FGI3236F085	FAIRCHILD	获取价格	EcoSPARK 320mJ, 360V, N-Channel Ignition IGBT
FGI3236-F085	ONSEMI	获取价格	IGBT，360V，27A，1.32V，320mJ，TO-262，EcoSPARK® I，

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