Datasheet > FGHL50T65LQDTL4

FGHL50T65LQDTL4

更新时间： 2023-09-03 20:33:17

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
9页	202K
描述
IGBT - 650 V 50 A FS4 low Vce(sat) IGBT with full rated copack diode

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中文翻译

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数据手册

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FGHL50T65LQDTL4 数据手册

DATA SHEET

www.onsemi.com

Field Stop Trench IGBT

50 A, 650 V

V_CE(Sat)= 1.15 V

50 A, 650 V

FGHL50T65LQDTL4

Field stop 4 generation Low V

IGBT technology and Full

CE(Sat)

current rated copack Diode technology.

E1: Kelvin Emitter

E2: Power Emitter

Features

• Maximum Junction Temperature: T = 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: V

= 1.15 V (Typ.) @ I = 50 A

CE(Sat)

• 100% of the Parts are Tested for I (Note 2)

• Smooth and Optimized Switching

• Tight Parameter Distribution

• Co−packed with Soft and Fast Recovery Diode

• These Devices are Pb−Free and are RoHS Compliant

TO−247−4LD

CASE 340CJ

Typical Applications

• Solar Inverter

• UPS, ESS

MARKING DIAGRAM

• PFC, Converters

MAXIMUM RATINGS

Rating

Symbol Value

Unit

FGHL50T65

LQDTL4

Collector to Emitter Voltage

650

CES

GES

Gate to Emitter Voltage

Transient Gate to Emitter Voltage

Collector Current (Note 1)

@ T = 25°C

@ T = 100°C

Pulsed Collector Current (Note 2)

Pulsed Collector Current (Note 3)

200

Diode Forward Current (Note 1) @ T

@ T

25°C

100°C

C =

= onsemi Logo

= Assembly Plant Code

= 3−Digit Date Code

C =

Pulsed Diode Maximum Forward Current

200

= 2−Digit Lot Traceability Code

Maximum Power Dissipation @ T = 25°C

341

170

FGHL50T65LQDTL4 = Specific Device Code

@ T = 100°C

Operating Junction and Storage Temperature

Range

T ,

−55 to

+175

°C

STG

ORDERING INFORMATION

Maximum Lead Temp. for Soldering

Purposes (1/8″ from case for 5 s)

260

Device

Package

Shipping

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Value limit by bond wire

FGHL50T65LQDTL4 TO−247−4LD 450 Units/Tube

2. V = 400 V, V = 15 V, I = 200 A, Inductive Load, 100% tested

3. Repetitive rating: pulse width limited by max. junction temperature

Publication Order Number:

August, 2021 − Rev. 0

FGHL50T65LQDTL4/D

12 3 4 5 6 7...9

中文翻译

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FGHL75T65MQDTL4	ONSEMI	获取价格	IGBT - 650 V 75 A FS4 medium switching speed IGBT with full rated copack diode

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