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FGHL50T65LQDTL4

更新时间： 2023-09-03 20:33:17
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
9页 202K
描述
IGBT - 650 V 50 A FS4 low Vce(sat) IGBT with full rated copack diode

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FGHL50T65LQDTL4 数据手册

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DATA SHEET  
www.onsemi.com  
Field Stop Trench IGBT  
50 A, 650 V  
VCE(Sat) = 1.15 V  
50 A, 650 V  
FGHL50T65LQDTL4  
th  
C
Field stop 4 generation Low V  
IGBT technology and Full  
CE(Sat)  
current rated copack Diode technology.  
E1: Kelvin Emitter  
E2: Power Emitter  
Features  
G
• Maximum Junction Temperature: T = 175°C  
J
• Positive Temperature Co−efficient for Easy Parallel Operating  
• High Current Capability  
E1  
E2  
• Low Saturation Voltage: V  
= 1.15 V (Typ.) @ I = 50 A  
C
CE(Sat)  
• 100% of the Parts are Tested for I (Note 2)  
LM  
• Smooth and Optimized Switching  
• Tight Parameter Distribution  
• Co−packed with Soft and Fast Recovery Diode  
• These Devices are Pb−Free and are RoHS Compliant  
TO−247−4LD  
CASE 340CJ  
Typical Applications  
• Solar Inverter  
• UPS, ESS  
MARKING DIAGRAM  
• PFC, Converters  
MAXIMUM RATINGS  
Rating  
Symbol Value  
Unit  
V
FGHL50T65  
LQDTL4  
Collector to Emitter Voltage  
V
650  
CES  
GES  
Gate to Emitter Voltage  
Transient Gate to Emitter Voltage  
V
20  
30  
V
Collector Current (Note 1)  
@ T = 25°C  
I
C
80  
50  
A
C
@ T = 100°C  
C
Pulsed Collector Current (Note 2)  
Pulsed Collector Current (Note 3)  
I
200  
200  
A
A
A
LM  
I
CM  
Diode Forward Current (Note 1) @ T  
@ T  
25°C  
100°C  
I
F
60  
50  
C =  
&Y  
&Z  
&3  
&K  
= onsemi Logo  
= Assembly Plant Code  
= 3−Digit Date Code  
C =  
Pulsed Diode Maximum Forward Current  
I
200  
A
FM  
= 2−Digit Lot Traceability Code  
Maximum Power Dissipation @ T = 25°C  
P
341  
170  
W
C
D
FGHL50T65LQDTL4 = Specific Device Code  
@ T = 100°C  
C
Operating Junction and Storage Temperature  
Range  
T ,  
−55 to  
+175  
°C  
°C  
J
T
STG  
ORDERING INFORMATION  
Maximum Lead Temp. for Soldering  
Purposes (1/8″ from case for 5 s)  
T
L
260  
Device  
Package  
Shipping  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Value limit by bond wire  
FGHL50T65LQDTL4 TO−247−4LD 450 Units/Tube  
2. V = 400 V, V = 15 V, I = 200 A, Inductive Load, 100% tested  
CC  
GE  
C
3. Repetitive rating: pulse width limited by max. junction temperature  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
August, 2021 − Rev. 0  
FGHL50T65LQDTL4/D  
 
1234567...9

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