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FGH80N60FDTU PDF预览

FGH80N60FDTU

更新时间: 2024-01-01 13:03:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
9页 666K
描述
600V, 80A Field Stop IGBT

FGH80N60FDTU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247
包装说明:ROHS COMPLIANT PACKAGE-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.67
外壳连接:COLLECTOR最大集电极电流 (IC):80 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
最大降落时间(tf):100 ns门极发射器阈值电压最大值:7 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):290 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):201 ns标称接通时间 (ton):74 ns
Base Number Matches:1

FGH80N60FDTU 数据手册

 浏览型号FGH80N60FDTU的Datasheet PDF文件第2页浏览型号FGH80N60FDTU的Datasheet PDF文件第3页浏览型号FGH80N60FDTU的Datasheet PDF文件第4页浏览型号FGH80N60FDTU的Datasheet PDF文件第5页浏览型号FGH80N60FDTU的Datasheet PDF文件第6页浏览型号FGH80N60FDTU的Datasheet PDF文件第7页 
December 2007  
FGH80N60FD  
tm  
600V, 80A Field Stop IGBT  
Features  
General Description  
High current capability  
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-  
ries of Field Stop IGBTs offer the optimum performance for  
Induction Heating applications where low conduction and  
switching losses are essential.  
Low saturation voltage: VCE(sat) =1.8V @ IC = 40A  
High input impedance  
Fast switching  
RoHS complaint  
Applications  
Induction Heating Application  
E
C
C
G
G
COLLECTOR  
(FLANGE)  
E
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
600  
Units  
VCES  
VGES  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
V
V
± 20  
Collector Current  
@ TC = 25°C  
@ TC = 100°C  
@ TC = 25°C  
@ TC = 25°C  
@ TC = 100°C  
80  
A
IC  
ICM (1)  
PD  
Collector Current  
40  
A
Pulsed Collector Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
160  
A
290  
W
W
°C  
°C  
116  
TJ  
-55 to +150  
-55 to +150  
Tstg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
TL  
300  
°C  
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
RθJC(IGBT)  
RθJC(Diode)  
RθJA  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
Typ.  
Max.  
0.43  
1.5  
Units  
°C/W  
°C/W  
°C/W  
--  
--  
40  
©2007 Fairchild Semiconductor Corporation  
FGH80N60FD Rev. A  
1
www.fairchildsemi.com  

FGH80N60FDTU 替代型号

型号 品牌 替代类型 描述 数据表
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