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FGHL50T65LQDT PDF预览

FGHL50T65LQDT

更新时间： 2023-09-03 20:30:28
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
9页 209K
描述
IGBT - 650 V 50 A FS4 low Vce(sat) IGBT with full rated copack diode

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中文翻译

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FGHL50T65LQDT 数据手册

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DATA SHEET  
www.onsemi.com  
Field Stop Trench IGBT  
50 A, 650 V  
VCE(Sat) = 1.15 V  
50 A, 650 V  
FGHL50T65LQDT  
th  
C
Field stop 4 generation Low V  
IGBT technology and Full  
CE(Sat)  
current rated copak Diode technology.  
Features  
G
• Maximum Junction Temperature: T = 175°C  
J
• Positive Temperature Co−efficient for Easy Parallel Operating  
• High Current Capability  
E
• Low Saturation Voltage: V  
= 1.15 V (Typ.) @ I = 50 A  
C
CE(Sat)  
• 100% of the Parts are Tested for I (Note 2)  
LM  
• Smooth and Optimized Switching  
• Tight Parameter Distribution  
G
• Co−packed with Soft and Fast Recovery Diode  
• These Devices are Pb−Free and are RoHS Compliant  
C
E
TO−247−3L  
CASE 340CX  
Typical Applications  
• Solar Inverter  
• UPS, ESS  
MARKING DIAGRAM  
• PFC, Converters  
MAXIMUM RATINGS  
Rating  
Symbol Value  
Unit  
V
&Y&Z&3&K  
FGHL  
50T65LQDT  
Collector−to−Emitter Voltage  
V
650  
CES  
GES  
Gate−to−Emitter Voltage  
Transient Gate−to−Emitter Voltage  
V
20  
30  
V
Collector Current (Note 1)  
@ T = 25°C  
I
C
80  
50  
A
C
@ T = 100°C  
C
Pulsed Collector Current (Note 2)  
Pulsed Collector Current (Note 3)  
I
200  
200  
A
A
A
&Y  
&Z  
&3  
&K  
= onsemi Logo  
= Assembly Plant Code  
= 3−Digit Date Code  
LM  
I
CM  
= 2−Digit Lot Traceability Code  
Diode Forward Current  
@ T  
25°C  
100°C  
I
F
60  
50  
C =  
C =  
@ T  
FGHL50T65LQDT = Specific Device Code  
Pulsed Diode Maximum Forward Current  
I
200  
A
FM  
Maximum Power Dissipation @ T = 25°C  
P
341  
170  
W
C
D
ORDERING INFORMATION  
@ T = 100°C  
C
Device  
Package  
Shipping  
Operating Junction and Storage Temperature  
Range  
T ,  
−55 to  
+175  
°C  
°C  
J
FGHL50T65LQDT TO−247−3L 450 Units/Tube  
T
STG  
Maximum Lead Temp. for Soldering  
Purposes (1/8″ from case for 5 s)  
T
260  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Value limit by bond wire  
2. V = 400 V, V = 15 V, I = 200 A, Inductive Load, 100% tested  
CC  
GE  
C
3. Repetitive rating: pulse width limited by max. junction temperature  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
August, 2021 − Rev. 0  
FGHL50T65LQDT/D  
 
1234567...9

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