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FGHL40T120SWD PDF预览

FGHL40T120SWD

更新时间： 2023-09-03 20:37:22
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
9页 289K
描述
1200V, 40A Field Stop VII (FS7) Discrete IGBT in TO247-3L Packaging

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中文翻译

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FGHL40T120SWD 数据手册

 浏览型号FGHL40T120SWD的Datasheet PDF文件第2页浏览型号FGHL40T120SWD的Datasheet PDF文件第3页浏览型号FGHL40T120SWD的Datasheet PDF文件第4页浏览型号FGHL40T120SWD的Datasheet PDF文件第5页浏览型号FGHL40T120SWD的Datasheet PDF文件第6页浏览型号FGHL40T120SWD的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
IGBT – Power, Co-PAK  
N-Channel, Field Stop VII  
BV  
V
I
C
CES  
CE(SAT)  
1200 V  
1.7 V  
40 A  
(FS7), Non SCR, TO247-3L  
1200 V, 1.7 V, 40 A  
PIN CONNECTIONS  
C
FGHL40T120SWD  
Description  
Using the novel field stop 7th generation IGBT technology and the  
Gen7 Diode in TO247 3−lead package, FGHL40T120SWD offers the  
optimum performance with low switching and conduction losses for high  
efficiency operations in various applications like Solar, UPS and ESS.  
G
E
Features  
• Maximum Junction Temperature − T = 175°C  
J
• Positive Temperature Coefficient for Easy Parallel Operation  
• High Current Capability  
G
• Smooth and Optimized Switching  
• Low Switching Loss  
C
E
TO−247−3LD  
CASE 340CX  
• RoHS Compliant  
Applications  
• Boost and Inverter in Solar Applications  
• UPS  
• Energy Storage System  
MARKING DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Collector−to−Emitter Voltage  
Gate−to−Emitter Voltage  
Symbol  
Value  
1200  
20  
Unit  
$Y&Z&3&K  
FGHL40  
T120SWD  
V
CES  
V
GES  
V
Transient Gate−to−Emitter Voltage  
30  
Collector Current  
Power Dissipation  
T
= 25°C (Note 1)  
I
70  
A
W
A
C
C
T
= 100°C  
= 25°C  
40  
C
$Y  
&Z  
&3  
&K  
= onsemi Logo  
= Assembly Plant Code  
= 3−Digit Date Code  
T
P
469  
234  
160  
C
D
T
C
= 100°C  
= 2−Digit Lot Traceability Code  
FGHL40T120SWD = Specific Device Code  
Pulsed Collector  
Current  
T
T
= 25°C (Note 2)  
I
CM  
C
t = 10 ms  
p
Diode Forward  
Current  
= 25°C (Note 1)  
I
80  
40  
C
F
ORDERING INFORMATION  
T
C
= 100°C  
Device  
Package  
Shipping  
Pulsed Diode Maximum  
Forward Current  
T
= 25°C,  
I
160  
C
p
FM  
t = 10 ms  
FGHL40T120SWD  
TO−247  
30 Units / Tube  
(Pb−Free)  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
Lead Temperature for Soldering Purposes  
T
L
260  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Value limit by bond wire  
2. Repetitive rating: Pulse width limited by max. junction temperature  
© Semiconductor Components Industries, LLC, 2023  
1
Publication Order Number:  
April, 2023 − Rev. 0  
FGHL40T120SWD/D  
 
1234567...9

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