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FGHL40T65LQDT PDF预览

FGHL40T65LQDT

更新时间: 2023-09-03 20:35:12
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
9页 206K
描述
IGBT - 650 V 40 A FS4 low Vce(sat) IGBT with full rated copack diode

FGHL40T65LQDT 数据手册

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DATA SHEET  
www.onsemi.com  
Field Stop Trench IGBT  
40 A, 650 V  
VCE(Sat) = 1.15 V  
40 A, 650 V  
FGHL40T65LQDT  
th  
C
Field stop 4 generation Low V  
IGBT technology and Full  
CE(Sat)  
current rated copak Diode technology.  
Features  
G
Maximum Junction Temperature: T = 175°C  
J
Positive Temperature Co−efficient for Easy Parallel Operating  
High Current Capability  
E
Low Saturation Voltage: V  
= 1.15 V (Typ.) @ I = 40 A  
C
CE(Sat)  
100% of the Parts are Tested for I (Note 2)  
LM  
Smooth and Optimized Switching  
Tight Parameter Distribution  
RoHS Compliant  
G
C
E
TO−247−3L  
CASE 340CX  
Typical Applications  
Solar Inverter  
UPS, ESS  
MARKING DIAGRAM  
PFC, Converters  
MAXIMUM RATINGS  
Rating  
Symbol Value  
Unit  
V
Collector−to−Emitter Voltage  
V
CES  
V
GES  
650  
&Y&Z&3&K  
FGHL  
40T65LQDT  
Gate−to−Emitter Voltage  
Transient Gate−to−Emitter Voltage  
20  
30  
V
Collector Current (Note 1)  
@ T = 25°C  
I
C
60  
40  
A
C
@ T = 100°C  
C
Pulsed Collector Current (Note 2)  
Pulsed Collector Current (Note 3)  
I
160  
160  
A
A
A
LM  
&Y  
&Z  
&3  
&K  
= onsemi Logo  
= Assembly Plant Code  
= 3−Digit Date Code  
I
CM  
Diode Forward Current  
@ T  
25°C  
100°C  
I
F
60  
40  
C =  
C =  
@ T  
= 2−Digit Lot Traceability Code  
FGHL40T65LQDT = Specific Device Code  
Pulsed Diode Maximum Forward Current  
I
160  
A
FM  
Maximum Power Dissipation @ T = 25°C  
P
D
273  
136  
W
C
@ T = 100°C  
C
ORDERING INFORMATION  
Operating Junction and Storage Temperature  
Range  
T ,  
−55 to  
+175  
°C  
°C  
J
Device  
Package  
Shipping  
T
STG  
FGHL40T65LQDT TO−247−3L 450 Units/Tube  
Maximum Lead Temp. for Soldering  
Purposes (1/8from case for 5 s)  
T
L
260  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Value limit by bond wire  
2. V = 400 V, V = 15 V, I = 160 A, Inductive Load, 100% tested  
CC  
GE  
C
3. Repetitive rating: pulse width limited by max. junction temperature  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
August, 2021 − Rev. 0  
FGHL40T65LQDT/D  
 

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