Datasheet > FGHL40T65MQDT

FGHL40T65MQDT

更新时间： 2023-09-03 20:33:54

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
9页	252K
描述
IGBT - 650 V 40 A FS4 medium switching speed IGBT with full rated copack diode

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中文翻译

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数据手册

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FGHL40T65MQDT 数据手册

Field Stop Trench IGBT

650 V, 40 A

FGHL40T65MQDT

Field stop 4 generation mid speed IGBT technology copacked

with full rated current diode.

Features

www.onsemi.com

• Maximum Junction Temperature: T = 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

40 A, 650 V

_CESat= 1.45 V

• Low Saturation Voltage: V

= 1.45 V (Typ.) @ I = 40 A

CE(Sat)

• 100% of the Parts are Tested for I (Note 2)

• Smooth and Optimized Switching

• Tight Parameter Distribution

• RoHS Compliant

Typical Applications

• Solar Inverter

• UPS, ESS

• PFC, Converters

MAXIMUM RATINGS

Parameter

Symbol Value

Unit

Collector to Emitter Voltage

CES

GES

650

Gate to Emitter Voltage

Transient Gate to Emitter Voltage

TO−247−3L

CASE 340CX

Collector Current (Note 1)

@ T = 25°C

@ T = 100°C

Pulsed Collector Current (Note 2)

Pulsed Collector Current (Note 3)

160

MARKING DIAGRAM

Diode Forward Current (Note 1) @ T

@ T

25°C

100°C

C =

Pulsed Diode Maximum Forward Current

160

Maximum Power Dissipation @ T = 25°C

238

119

$Y&Z&3&K

FGHL

@ T = 100°C

40T65MQDT

Operating Junction and Storage Temperature

Range

T ,

−55 to

+175

°C

STG

Maximum Lead Temp. for Soldering

Purposes (1/8″ from case for 5 s)

260

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Value limit by bond wire

= ON Semiconductor Logo

= Assembly Plant Code

= 3−Digit Date Code

= 2−Digit Lot Traceability Code

2. V = 400 V, V = 15 V, I = 160 A, Inductive Load, 100% tested

FGHL40T65MQDT = Specific Device Code

3. Repetitive rating: pulse width limited by max. junction temperature

ORDERING INFORMATION

Device

Package

Shipping

FGHL40T65MQDT TO−247−3L 30 Units / Tube

Publication Order Number:

April, 2020 − Rev. 0

FGHL40T65MQDT/D

12 3 4 5 6 7...9

中文翻译

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与FGHL40T65MQDT相关器件

型号	品牌	获取价格	描述	数据表
FGHL50T65LQDT	ONSEMI	获取价格	IGBT - 650 V 50 A FS4 low Vce(sat) IGBT with full rated copack diode
FGHL50T65LQDTL4	ONSEMI	获取价格	IGBT - 650 V 50 A FS4 low Vce(sat) IGBT with full rated copack diode
FGHL50T65MQD	ONSEMI	获取价格	IGBT - 650 V 50 A FS4 medium switching speed IGBT
FGHL50T65MQDT	ONSEMI	获取价格	IGBT - 650 V 50 A FS4 medium switching speed IGBT with full rated copack diode
FGHL50T65MQDTL4	ONSEMI	获取价格	IGBT - 650 V 50 A FS4 medium switching speed IGBT with full rated copack diode
FGHL50T65SQ	ONSEMI	获取价格	IGBT 650V FS4 高速版，适用于采用 TO-247 封装的 PFC 应用
FGHL50T65SQDT	ONSEMI	获取价格	IGBT, 650 V, 50 A Field Stop Trench
FGHL75T65LQDT	ONSEMI	获取价格	IGBT - 650 V 75 A FS4 low Vce(sat) IGBT with full rated copack diode
FGHL75T65LQDTL4	ONSEMI	获取价格	IGBT - 650 V 75 A FS4 low Vce(sat) IGBT with full rated copack diode
FGHL75T65MQD	ONSEMI	获取价格	IGBT - 650 V 75 A FS4 medium switching speed IGBT

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