Datasheet > FGHL40T65MQD

FGHL40T65MQD

更新时间： 2024-09-24 11:13:55

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
9页	332K
描述
IGBT - 650 V 40 A FS4 medium switching speed IGBT

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中文翻译

获取价格

数据手册

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FGHL40T65MQD 数据手册

Field Stop Trench IGBT

650 V, 40 A

FGHL40T65MQD

Field stop 4th generation mid speed IGBT technology and full

current rated copak Diode technology.

Features

www.onsemi.com

• Maximum Junction Temperature: T = 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

TYP

I MAX

CES

CE(sat)

• Low Saturation Voltage: V

• 100% of the Parts are Tested for I (Note 2)

= 1.45 V (Typ.) @ I = 40 A

CE(sat)

650 V

1.45 V

40 A

• Smooth & Optimized Switching

• Tight Parameter Distribution

• RoHS Compliant

Typical Applications

• Solar Inverter

• UPS, ESS

• PFC, Converters

MAXIMUM RATINGS

Parameter

Collector−to−Emitter Voltage

Gate−to−Emitter Voltage

Symbol

Value

650

Unit

CES

GES

TO−247 LONG LEADS

Transient Gate−to−Emitter Voltage

Collector Current (Note 1)

CASE 340CX

= 25°C

= 100°C

MARKING DIAGRAM

Pulsed Collector Current (Note 2)

Pulsed Collector Current (Note 3)

Diode Forward Current (Note 1)

160

= 25°C

= 65°C

&Z&3&K

FGHL

40T65MQD

Pulsed Diode Maximum Forward Current

160

Non−Repetitive Forward Surge Current

F,SM

(Half−Sine Pulse, t = 8.3 ms, T = 25°C)

(Half−Sine Pulse, t = 8.3 ms, T = 150°C)

Maximum Power Dissipation

= 25°C

238

119

= Assembly Plant Code

= 3−Digit Date Code

= 2−Digit Lot Traceability Code

= 100°C

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+175

FGHL40T65MQD = Specific Device Code

Maximum Lead Temperature for Soldering

Purposes (1/8″ from case for 5 s)

300

ORDERING INFORMATION

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Value limit by bond wire

Device

Package

Shipping

FGHL40T65MQD TO−247−3L

30 Units / Rail

2. V = 400 V, V = 15 V, I = 160 A, R = 14 W, Inductive Load, 100% Tested

3. Repetitive rating: Pulse width limited by max. junction temperature

Publication Order Number:

February, 2020 − Rev. 1

FGHL40T65MQD/D

12 3 4 5 6 7...9

中文翻译

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与FGHL40T65MQD相关器件

型号	品牌	获取价格	描述	数据表
FGHL40T65MQDT	ONSEMI	获取价格	IGBT - 650 V 40 A FS4 medium switching speed IGBT with full rated copack diode
FGHL50T65LQDT	ONSEMI	获取价格	IGBT - 650 V 50 A FS4 low Vce(sat) IGBT with full rated copack diode
FGHL50T65LQDTL4	ONSEMI	获取价格	IGBT - 650 V 50 A FS4 low Vce(sat) IGBT with full rated copack diode
FGHL50T65MQD	ONSEMI	获取价格	IGBT - 650 V 50 A FS4 medium switching speed IGBT
FGHL50T65MQDT	ONSEMI	获取价格	IGBT - 650 V 50 A FS4 medium switching speed IGBT with full rated copack diode
FGHL50T65MQDTL4	ONSEMI	获取价格	IGBT - 650 V 50 A FS4 medium switching speed IGBT with full rated copack diode
FGHL50T65SQ	ONSEMI	获取价格	IGBT 650V FS4 高速版，适用于采用 TO-247 封装的 PFC 应用
FGHL50T65SQDT	ONSEMI	获取价格	IGBT, 650 V, 50 A Field Stop Trench
FGHL75T65LQDT	ONSEMI	获取价格	IGBT - 650 V 75 A FS4 low Vce(sat) IGBT with full rated copack diode
FGHL75T65LQDTL4	ONSEMI	获取价格	IGBT - 650 V 75 A FS4 low Vce(sat) IGBT with full rated copack diode

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