Datasheet > 晶体管 > IGBT> FGH80N60FD

FGH80N60FD

更新时间： 2024-01-12 14:47:53

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		双极性晶体管
页数	文件大小	规格书
9页	666K
描述
600V, 80A Field Stop IGBT

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数据手册

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FGH80N60FD 数据手册

December 2007

FGH80N60FD

600V, 80A Field Stop IGBT

Features

General Description

•

High current capability

Using Novel Field Stop IGBT Technology, Fairchild’s new ses-

ries of Field Stop IGBTs offer the optimum performance for

Induction Heating applications where low conduction and

switching losses are essential.

Low saturation voltage: V_CE(sat)=1.8V @ I_C= 40A

High input impedance

Fast switching

RoHS complaint

Applications

•

Induction Heating Application

COLLECTOR

(FLANGE)

Absolute Maximum Ratings

Symbol

Description

Ratings

600

Units

V_CES

V_GES

Collector-Emitter Voltage

Gate-Emitter Voltage

± 20

Collector Current

@ T_C= 25°C

@ T_C= 100°C

@ T_C= 25°C

@ T_C= 100°C

I_C

I_{CM (1)}

P_D

Collector Current

Pulsed Collector Current

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

160

290

°C

116

T_J

-55 to +150

T_stg

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

T_L

300

°C

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

R_θJC(IGBT)

R_θJC(Diode)

R_θJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Typ.

Max.

0.43

1.5

Units

°C/W

FGH80N60FD Rev. A

www.fairchildsemi.com

12 3 4 5 6 7...9

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