5秒后页面跳转
FGH80N60FD2TU PDF预览

FGH80N60FD2TU

更新时间: 2024-09-28 03:36:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 双极性晶体管
页数 文件大小 规格书
9页 650K
描述
600V, 80A Field Stop IGBT

FGH80N60FD2TU 数据手册

 浏览型号FGH80N60FD2TU的Datasheet PDF文件第2页浏览型号FGH80N60FD2TU的Datasheet PDF文件第3页浏览型号FGH80N60FD2TU的Datasheet PDF文件第4页浏览型号FGH80N60FD2TU的Datasheet PDF文件第5页浏览型号FGH80N60FD2TU的Datasheet PDF文件第6页浏览型号FGH80N60FD2TU的Datasheet PDF文件第7页 
April 2008  
FGH80N60FD2  
tm  
600V, 80A Field Stop IGBT  
Features  
General Description  
High current capability  
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-  
ries of Field Stop IGBTs offer the optimum performance for  
Induction Heating applications where low conduction and  
switching losses are essential.  
Low saturation voltage: VCE(sat) =1.8V @ IC = 40A  
High input impedance  
Fast switching  
RoHS compliant  
Applications  
Induction Heating Application  
E
C
C
G
G
COLLECTOR  
(FLANGE)  
E
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
600  
Units  
VCES  
VGES  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
V
V
± 20  
Collector Current  
@ TC = 25°C  
@ TC = 100°C  
@ TC = 25°C  
@ TC = 25°C  
@ TC = 100°C  
80  
A
IC  
ICM (1)  
PD  
Collector Current  
40  
A
Pulsed Collector Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
160  
A
290  
W
W
°C  
°C  
116  
TJ  
-55 to +150  
-55 to +150  
Tstg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
TL  
300  
°C  
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
RθJC(IGBT)  
RθJC(Diode)  
RθJA  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
Typ.  
Max.  
0.43  
1.45  
40  
Units  
°C/W  
°C/W  
°C/W  
--  
--  
©2008 Fairchild Semiconductor Corporation  
FGH80N60FD2 Rev. A1  
1
www.fairchildsemi.com  

FGH80N60FD2TU 替代型号

型号 品牌 替代类型 描述 数据表
STGW39NC60VD STMICROELECTRONICS

功能相似

N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT
STGY40NC60VD STMICROELECTRONICS

功能相似

N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH?? IGBT
IKW50N60T INFINEON

功能相似

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-p

与FGH80N60FD2TU相关器件

型号 品牌 获取价格 描述 数据表
FGH80N60FDTU FAIRCHILD

获取价格

600V, 80A Field Stop IGBT
FGH80N60FDTU ONSEMI

获取价格

IGBT,600V,场截止
FGHL40S65UQ ONSEMI

获取价格

IGBT,650 V,40A,场截止沟槽
FGHL40T120SWD ONSEMI

获取价格

1200V, 40A Field Stop VII (FS7) Discrete IGBT in TO247-3L Packaging
FGHL40T65LQDT ONSEMI

获取价格

IGBT - 650 V 40 A FS4 low Vce(sat) IGBT with full rated copack diode
FGHL40T65MQD ONSEMI

获取价格

IGBT - 650 V 40 A FS4 medium switching speed IGBT
FGHL40T65MQDT ONSEMI

获取价格

IGBT - 650 V 40 A FS4 medium switching speed IGBT with full rated copack diode
FGHL50T65LQDT ONSEMI

获取价格

IGBT - 650 V 50 A FS4 low Vce(sat) IGBT with full rated copack diode
FGHL50T65LQDTL4 ONSEMI

获取价格

IGBT - 650 V 50 A FS4 low Vce(sat) IGBT with full rated copack diode
FGHL50T65MQD ONSEMI

获取价格

IGBT - 650 V 50 A FS4 medium switching speed IGBT