IKW50N60T

更新时间： 2024-01-01 13:57:28

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管双极性晶体管
页数	文件大小	规格书
13页	417K
描述
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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中文翻译

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技术参数
数据手册
替代型号

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IKW50N60T 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	7.81
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

IKW50N60T 数据手册

IKW50N60T

TrenchStop Series

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

•

Very low V_CE(sat)1.5 V (typ.)

Maximum Junction Temperature 175 °C

Short circuit withstand time – 5µs

Designed for :

- Frequency Converters

- Uninterrupted Power Supply

•

Trench and Fieldstop technology for 600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

P-TO-247-3-1

(TO-220AC)

- low V_CE(sat)

•

Positive temperature coefficient in V_CE(sat)

Low EMI

Low Gate Charge

Very soft, fast recovery anti-parallel EmCon HE diode

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}

T_j,max

Marking Code

K50T60

Package Ordering Code

TO-247 Q67040S4718

IKW50N60T

600V

50A

1.5V

175°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current, limited by T_jmax

T_C= 25°C

V_CE

I_C

600

80¹⁾

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

I_Cpuls

I_F

150

Turn off safe operating area (V_CE≤ 600V, T_j≤ 175°C)

Diode forward current, limited by T_jmax

T_C= 25°C

100

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage

I_Fpuls

V_GE

t_SC

150

±20

Short circuit withstand time²⁾

µs

_GE= 15V, V_CC≤ 400V, T_j≤ 150°C

P_tot

T_j

T_stg

333

Power dissipation T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-40...+175

-55...+175

260

°C

¹⁾Value limited by bond wire

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.1 Dec-04

Power Semiconductors

12 3 4 5 6 7...13

中文翻译

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IKW50N60T 替代型号

型号	品牌	替代类型	描述	数据表
FGH40N60SMD	FAIRCHILD	功能相似	Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB, ROHS COMP
FGH80N60FD2TU	FAIRCHILD	功能相似	600V, 80A Field Stop IGBT

与IKW50N60T相关器件

型号	品牌	获取价格	描述	数据表
IKW50N60T_08	INFINEON	获取价格	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
IKW50N60TA	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IKW50N60TFKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PL
IKW50N60TXK	INFINEON	获取价格	暂无描述
IKW50N65EH5	INFINEON	获取价格	650V DuoPack IGBT and full-rated diode High speed series fifth generation
IKW50N65EH5_15	INFINEON	获取价格	650V DuoPack IGBT and full-rated diode High speed series fifth generation
IKW50N65ES5	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IKW50N65ES5XKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247,
IKW50N65ET7	INFINEON	获取价格	TRENCHSTOP™ IGBT7
IKW50N65F5	INFINEON	获取价格	650V DuoPack IGBT and Diode High speed switching series fifth generation

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