Datasheet > IKW50N65ET7

IKW50N65ET7

更新时间： 2023-09-03 20:38:43

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
19页	1652K
描述
TRENCHSTOP™ IGBT7

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中文翻译

获取价格

数据手册

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IKW50N65ET7 数据手册

IKW50N65ET7

Low Loss Duopack: IGBT 7

Low Loss Duopack: IGBT 7 with Trench and Fieldstop technology

Features

• V_CE= 650 V

• I_C= 50 A

• Very Low V_CEsat

• Low turn-oﬀ losses

• Short tail current

• Reduced EMI

• Humidity robust design

• Very sofꢀ fast recovery antiparallel diode

• Maximum junction temperature T_vjmax= 175°C

• Qualified according to JEDEC for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt7/

Potential applications

• Servo Drives

• General Purpose Drives (GPD)

• Industrial UPS

• Industrial SMPS

• Solar Optimizer

• Solar String Inverter

Product validation

• Product Validation: Qualified for industrial applications according to the relevant tests of

JEDEC47/20/22

Description

Package pin definition:

• Pin C & backside - Collector

• Pin E - Emitter

• Pin G - Gate

Type

Package

Marking

IKW50N65ET7

PG-TO247-3

K50EET7

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

1.00

2021-06-29

12 3 4 5 6 7...19

中文翻译

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IKW50N65RH5	INFINEON	获取价格	IGBT TRENCHSTOP™ 5;Silicon Carbide Schottky D
IKW50N65SS5	INFINEON	获取价格	Silicon Carbide Schottky Diode;IGBT TRENCHSTO
IKW50N65WR5	INFINEON	获取价格	Reverse conducting IGBT with monolithic body diode
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