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IKW75N65ET7 PDF预览

IKW75N65ET7

更新时间: 2023-09-03 20:33:14
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
19页 1716K
描述
TRENCHSTOP™ IGBT7

IKW75N65ET7 数据手册

 浏览型号IKW75N65ET7的Datasheet PDF文件第2页浏览型号IKW75N65ET7的Datasheet PDF文件第3页浏览型号IKW75N65ET7的Datasheet PDF文件第4页浏览型号IKW75N65ET7的Datasheet PDF文件第5页浏览型号IKW75N65ET7的Datasheet PDF文件第6页浏览型号IKW75N65ET7的Datasheet PDF文件第7页 
IKW75N65ET7  
Low Loss Duopack: IGBT 7  
Low Loss Duopack: IGBT 7 with Trench and Fieldstop technology  
Features  
• VCE = 650 V  
• IC = 75 A  
• Very Low VCEsat  
• Low turn-off losses  
• Short tail current  
• Reduced EMI  
• Humidity robust design  
• Very sofꢀ fast recovery antiparallel diode  
• Maximum junction temperature Tvjmax = 175°C  
• Qualified according to JEDEC for target applications  
• Pb-free lead plating; RoHS compliant  
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt7/  
Potential applications  
• Servo Drives  
G
C
E
• General Purpose Drives (GPD)  
• Industrial UPS  
• Industrial SMPS  
• Solar Optimizer  
• Solar String Inverter  
Product validation  
• Product Validation: Qualified for industrial applications according to the relevant tests of  
JEDEC47/20/22  
Description  
Package pin definition:  
• Pin C & backside - Collector  
• Pin E - Emitter  
• Pin G - Gate  
C
G
E
Type  
Package  
Marking  
IKW75N65ET7  
PG-TO247-3  
K75EET7  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
1.00  
2021-06-29  

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