Datasheet > IKW75N60T_08

IKW75N60T_08

更新时间： 2024-02-13 01:25:21

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
13页	407K
描述
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

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中文翻译

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数据手册

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IKW75N60T_08 数据手册

IKW75N60T

TrenchStop^®Series

Low Loss DuoPack : IGBT in TrenchStop^®and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

•

Very low V_CE(sat)1.5 V (typ.)

Maximum Junction Temperature 175 °C

Short circuit withstand time – 5µs

Positive temperature coefficient in V_CE(sat)

very tight parameter distribution

high ruggedness, temperature stable behaviour

very high switching speed

Low EMI

PG-TO-247-3

Very soft, fast recovery anti-parallel EmCon HE diode

Qualified according to JEDEC¹⁾for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:

•

Frequency Converters

Uninterrupted Power Supply

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}T_j,max

1.5V

Marking

Package

IKW75N60T

600V

75A

K75T60

PG-TO-247-3

175°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current, limited by T_jmax

T_C= 25°C

V_CE

I_C

600

80²⁾

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

I_Cpuls

I_F

225

Turn off safe operating area (V_CE≤ 600V, T_j≤ 175°C)

Diode forward current, limited by T_jmax

T_C= 25°C

80²⁾

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage

I_Fpuls

V_GE

t_SC

225

±20

Short circuit withstand time³⁾

µs

V_GE= 15V, V_CC≤ 400V, T_j≤ 150°C

P_tot

T_j

T_stg

428

Power dissipation T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-40...+175

-55...+175

260

°C

¹⁾J-STD-020 and JESD-022

²⁾Value limited by bondwire

³⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.6 Sep 08

Power Semiconductors

12 3 4 5 6 7...13

中文翻译

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