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IKW75N65RH5 PDF预览

IKW75N65RH5

更新时间: 2023-09-03 20:29:32
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
16页 1445K
描述
IGBT TRENCHSTOP™ 5;Silicon Carbide Schottky Diode

IKW75N65RH5 数据手册

 浏览型号IKW75N65RH5的Datasheet PDF文件第2页浏览型号IKW75N65RH5的Datasheet PDF文件第3页浏览型号IKW75N65RH5的Datasheet PDF文件第4页浏览型号IKW75N65RH5的Datasheet PDF文件第5页浏览型号IKW75N65RH5的Datasheet PDF文件第6页浏览型号IKW75N65RH5的Datasheet PDF文件第7页 
IKW75N65RH5  
CoolSiC Hybrid Discrete  
CoolSiC Hybrid Discrete - TRENCHSTOP 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC diode  
Features  
• VCE = 650 V  
• IC = 75 A  
• Ultra-low switching losses due to the combination of TRENCHSTOPTM 5 and CoolSiCTM  
technology  
• Benchmark efficiency in hard switching topologies  
• Plug-and-play replacement of pure silicon devices  
• Maximum junction temperature Tvjmax = 175°C  
• Qualified according to JEDEC for target applications  
• Pb-free lead plating; RoHS compliant  
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/  
Potential applications  
• Industrial SMPS  
• Industrial UPS  
• Solar string inverter  
• Energy storage  
• Charger  
Product validation  
• Qualified for applications listed above based on the test conditions in the relevant tests of  
JEDEC20/22  
Description  
Package pin definition:  
• Pin G - gate  
• Pin C & backside - collector  
• Pin E - emitter  
C
G
E
Type  
Package  
Marking  
IKW75N65RH5  
PG-TO247-3  
K75ERH5  
Datasheet  
www.infineon.com  
Please read the sections "Important notice" and "Warnings" at the end of this document  
Revision 1.10  
2022-09-22  

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