Datasheet > IKY40N120CH3

IKY40N120CH3

更新时间： 2024-12-01 14:54:27

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
17页	1424K
描述
IGBT HighSpeed 3

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中文翻译

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数据手册

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IKY40N120CH3 数据手册

IKY40N120CH3

Low switching losses IGBT in Highspeed3 technology

Low switching losses IGBT in Highspeed3 technology co-packed with soft fast recovery full current rated

antiparallel emitter controlled diode

Features

• V_CE= 1200 V

• I_C= 40 A

• Ultra-low loss switching losses due to Kelvin emitter pin package in combination with

Highspeed3 technology

• High eﬀiciency in hard switching and resonant topologies

• 10 µsec short circuit withstand time at T_vj= 175°C

• Easy parallel switching capability due to positive temperature coeﬀicient in V_CEsat

• Low EMI

• Low gate charge Q_G

• Very sofꢀ fast recovery full current antiparallel diode

• Maximum junction temperature T_vjmax= 175°C

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Potential applications

• Industrial UPS

• Charger

• Energy storage

• Three-level solar string inverter

Product validation

• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Description

Type

Package

Marking

IKY40N120CH3

PG-TO247-4-2

K40MCH3

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.10

2023-01-19

12 3 4 5 6 7...17

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