Datasheet > IKY50N120CH3

IKY50N120CH3

更新时间： 2024-12-01 11:14:43

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
16页	1572K
描述
IGBT HighSpeed 3

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中文翻译

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数据手册

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IKY50N120CH3 数据手册

IKY50N120CH3

HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT

LowꢀswitchingꢀlossesꢀIGBTꢀinꢀHighspeed3ꢀtechnologyꢀcopackedꢀwithꢀsoft,ꢀfast

recoveryꢀfullꢀcurrentꢀratedꢀanti-parallelꢀEmitterꢀControlledꢀdiode

ꢀ

Features:

HighꢀspeedꢀH3ꢀtechnologyꢀoffers:

•ꢀUltra-lowꢀlossꢀswitchingꢀlossesꢀthanksꢀtoꢀKelvinꢀemitterꢀpin

packageꢀinꢀcombinationꢀwithꢀHighꢀspeedꢀH3ꢀtechnology

•ꢀHighꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonantꢀtopologies

•ꢀ10µsecꢀshortꢀcircuitꢀwithstandꢀtimeꢀatꢀT_vj=175°C

•ꢀEasyꢀparallelingꢀcapabilityꢀdueꢀtoꢀpositiveꢀtemperature

coefficientꢀinꢀV_CE(sat)

•ꢀLowꢀEMI

•ꢀLowꢀGateꢀChargeꢀQ_G

•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀfullꢀcurrentꢀanti-parallelꢀdiode

•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:

http://www.infineon.com/igbt/

Applications:

•ꢀIndustrialꢀUPS

•ꢀCharger

•ꢀEnergyꢀStorage

•ꢀThree-levelꢀSolarꢀStringꢀInverter

ProductꢀValidation:

Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests

ofꢀJEDEC47/20/22

KeyꢀPerformanceꢀandꢀPackageꢀParameters

Type

V_CE

I_C

V_CEsat,ꢀT_vj=25°C T_vjmax

2V 175°C

Marking

Package

IKY50N120CH3

1200V

50A

K50MCH3

PG-TO247-4-2

Datasheet

www.infineon.com

PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument

Vꢀ2.3

2019-04-15

12 3 4 5 6 7...16

中文翻译

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