Datasheet > IKY150N65EH7

IKY150N65EH7

更新时间： 2024-11-06 15:19:07

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
17页	1993K
描述
Hard-switching 650 V, 120 A?TRENCHSTOP? IGBT7?H7 discrete in?TO247PLUS-4 package?technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations..

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IKY150N65EH7 数据手册

IKY150N65EH7

High speed and low saturation voltage 650 V TRENCHSTOP^™IGBT7 technology

Final datasheet

High speed and low saturation voltage 650 V TRENCHSTOP^™IGBT7 technology copacked with soft fast recovery

Emitter Controlled 7 diode

Features

• V_CE= 650 V

• I_C= 150 A

• Low switching losses

• Very low collector-emitter saturation voltage V_CEsat

• Very soft fast recovery antiparallel diode

• Smooth switching behavior

• Humidity robustness

• Optimized for hard switching, two- and three-level topologies

• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Potential applications

• Industrial UPS

• EV-Charging

• String inverter

• Welding

Product validation

• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Description

Type

Package

Marking

IKY150N65EH7

PG-TO247-4-PLUS-NN5.1

K150EEH7

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.10

2023-11-15

12 3 4 5 6 7...17

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