IKW50N60TXK

更新时间： 2024-01-03 17:44:14

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管双极性晶体管
页数	文件大小	规格书
13页	417K
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IKW50N60TXK 数据手册

IKW50N60T

TrenchStop Series

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

•

Very low V_CE(sat)1.5 V (typ.)

Maximum Junction Temperature 175 °C

Short circuit withstand time – 5µs

Designed for :

- Frequency Converters

- Uninterrupted Power Supply

•

Trench and Fieldstop technology for 600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

P-TO-247-3-1

(TO-220AC)

- low V_CE(sat)

•

Positive temperature coefficient in V_CE(sat)

Low EMI

Low Gate Charge

Very soft, fast recovery anti-parallel EmCon HE diode

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}

T_j,max

Marking Code

K50T60

Package Ordering Code

TO-247 Q67040S4718

IKW50N60T

600V

50A

1.5V

175°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current, limited by T_jmax

T_C= 25°C

V_CE

I_C

600

80¹⁾

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

I_Cpuls

I_F

150

Turn off safe operating area (V_CE≤ 600V, T_j≤ 175°C)

Diode forward current, limited by T_jmax

T_C= 25°C

100

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage

I_Fpuls

V_GE

t_SC

150

±20

Short circuit withstand time²⁾

µs

_GE= 15V, V_CC≤ 400V, T_j≤ 150°C

P_tot

T_j

T_stg

333

Power dissipation T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-40...+175

-55...+175

260

°C

¹⁾Value limited by bond wire

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.1 Dec-04

Power Semiconductors

12 3 4 5 6 7...13

中文翻译

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