Datasheet > IKW50N65SS5

IKW50N65SS5

更新时间： 2023-09-03 20:39:53

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
16页	1436K
描述
Silicon Carbide Schottky Diode;IGBT TRENCHSTOP™ 5

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中文翻译

获取价格

数据手册

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IKW50N65SS5 数据手册

IKW50N65SS5

™

CoolSiC Hybrid Discrete

™

CoolSiC Hybrid Discrete - TRENCHSTOP 5 S5 IGBT co-packed with full-rated 6th generation CoolSiC diode

Features

• V_CE= 650 V

• I_C= 50 A

• Ultra-low switching losses due to the combination of TRENCHSTOP^TM5 and CoolSiC^TM

technology

• Very low on-state losses

• Benchmark eﬀiciency in hard switching topologies

• Plug-and-play replacement of pure silicon devices

• Maximum junction temperature T_vjmax= 175°C

• Qualified according to JEDEC for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Potential applications

• Industrial SMPS

• Industrial UPS

• Solar string inverter

• Energy storage

• Charger

Product validation

• Qualified for applications listed above based on the test conditions in the relevant tests of

JEDEC20/22

Description

Package pin definition:

• Pin G - gate

• Pin C & backside - collector

• Pin E - emitter

Type

Package

Marking

IKW50N65SS5

PG-TO247-3

K50ESS5

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.10

2022-09-22

12 3 4 5 6 7...16

中文翻译

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